CDBQR0230L datasheet(1/4 Pages) COMCHIP

tên linh kiện	CDBQR0230L

Giải thích chi tiết về linh kiện	SMD Schottky Barrier Diode

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Io = 200 mA

VR = 30 Volts

CDBQR0230L

SMD Schottky Barrier Diode

(RoHS Device)

Page 1

QW-A1118

REV:C

SMD Diodes Specialist

Comchip Technology CO., LTD.

uA

V

30

0.5

IR

VF

Reverse current

Forward voltage

Parameter

Conditions

Symbol Min Typ Max Unit

VR = 10 V

IF = 200 mA

O

Maximum Rating (at TA=25 C unless otherwise noted)

O

Electrical Characteristics (at TA=25 C unless otherwise noted)

Features

Low forward voltage.

Designed for mounting on small surface.

Extremely thin / leadless package.

Majority carrier conduction.

Mechanical data

Case: 0402(1005) standard package,

molded plastic.

Terminals: Gold plated, solderable per

MIL-STD-750,method 2026.

Marking code: cathode band & BA

Mounting position: Any.

Weight: 0.001 gram(approx.).

A

mA

V

1

200

30

35

IO

VR

VRRM

IFSM

8.3ms single half sine-wave superimposed

on rate load(JEDEC method)

OC

+125

-40

TSTG

Tj

Storage temperature

Junction temperature

Average forward current

Reverse voltage

Repetitive peak reverse voltage

Forward current,surge peak

Parameter

Conditions

Symbol Min Typ Max Unit

mW

125

PD

Power Dissipation

0.041(1.05)

0.037(0.95)

0.026(0.65)

0.022(0.55)

0402(1005)

Dimensions in inches and (millimeter)

0.020(0.50) Typ.

0.022(0.55)

0.018(0.45)

0.012(0.30) Typ.

Số phần tương tự - CDBQR0230L

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