CDBQR0230R datasheet(1/4 Pages) COMCHIP

tên linh kiện	CDBQR0230R

Giải thích chi tiết về linh kiện	SMD Schottky Barrier Diode

PDF	4 Pages

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nhà sản xuất	COMCHIP [Comchip Technology]

Trang chủ	http://www.comchiptech.com

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1 / 4 page

Io = 200 mA

VR = 30 Volts

CDBQR0230R

SMD Schottky Barrier Diode

Page 1

QW-A1117

REV:C

SMD Diodes Specialist

A

mA

V

1

200

30

35

IO

VR

VRRM

IFSM

8.3ms single half sine-wave superimposed

on rate load(JEDEC method)

OC

+125

-40

TSTG

Tj

Storage temperature

Junction temperature

Average forward current

Reverse voltage

Repetitive peak reverse voltage

Forward current,surge peak

Parameter

Conditions

Symbol Min Typ Max Unit

uA

V

1

0.6

IR

VF

Reverse current

Forward voltage

Parameter

Conditions

Symbol Min Typ Max Unit

VR = 10 V

IF = 200 mA

O

Maximum Rating (at TA=25 C unless otherwise noted)

O

Electrical Characteristics (at TA=25 C unless otherwise noted)

Features

Low reverse current.

Designed for mounting on small surface.

Extremely thin / leadless package.

Majority carrier conduction.

Mechanical data

Case: 0402(1005) standard package,

molded plastic.

Terminals: Gold plated, solderable per

MIL-STD-750,method 2026.

Marking code: cathode band & BB

Mounting position: Any.

Weight: 0.001 gram(approx.).

Comchip Technology CO., LTD.

(RoHS Device)

mW

125

PD

Power Dissipation

0.041(1.05)

0.037(0.95)

0.026(0.65)

0.022(0.55)

0402(1005)

Dimensions in inches and (millimeter)

0.020(0.50) Typ.

0.022(0.55)

0.018(0.45)

0.012(0.30) Typ.

Số phần tương tự - CDBQR0230R

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Comchip Technology	CDBQR0230R-HF	200Kb / 4P	SMD Schottky Barrier Diode

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Mô tả tương tự - CDBQR0230R

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Số phần tương tự - CDBQR0230R

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