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SC656 bảng dữ liệu(PDF) 15 Page - Semtech Corporation |
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SC656 bảng dữ liệu(HTML) 15 Page - Semtech Corporation |
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15 / 17 page ![]() SC656 5 Place all bucket and decoupling capacitors — C, C2, C IN, and COUT — as close to the device as possible. All charge pump current passes through pins IN, OUT, C+, C2+, C-, and C2-. Therefore, ensure that all connections to these pins make use of wide traces so that the voltage drop on each connection is minimized. The GND pin should be connected to a ground plane using multiple vias to ensure proper thermal connection for optimal heat transfer. Make solid ground connections between the grounds of the C OUT, CIN, and the GND pin on the device. Resistors R SETM and RSETS should be connected as shown in Figure 2, close to pins IN and ISET. The placement and routing shown minimizes parasitic capacitance at the ISET pin. • • • • • Figure 3 shows the pads on layer that should be connected with vias to layer 2. C IN, COUT and the GND pin all use vias to connect to the ground plane. Figure 4 shows layer 2, which functions as the ground plane. Layer 2 is also used for routing signals to pins ENM, ENS, BANK, and BANK2. A void in the copper beneath the ISETM and ISETS pins serves to reduce capacitance coupled from these pins to ground. Avoid coupling noise to the ENM and ENS pins. This will help prevent unintended clocking of the PWM. The layout should be routed to achieve the least possible trace to trace capaci- tance between ENM and ENS. Also, minimize trace capacitance between ENM or ENS and any high speed signals. • • • Applications Information (continued) Figure 4 — Layer 2 Figure 3 — Layer 1 |
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