15

8127CS–AVR–10/09

ATtiny4/5/9/10

8. Errata

The revision letters in this section refer to the revision of the corresponding ATtiny4/5/9/10

device.

8.1

ATtiny4

8.1.1

Rev. D

1. ESD HBM (ESD STM 5.1) level ±1000V

The device meets ESD HBM (ESD STM 5.1) level ±1000V.

Problem Fix / Workaround

Always use proper ESD protection measures (Class 1C) when handling integrated circuits

before and during assembly.

2. Lock bits re-programming

Attempt to re-program Lock bits to present, or lower protection level (tampering attempt),

causes erroneously one, random line of Flash program memory to get erased. The Lock bits

will not get changed, as they should not.

Problem Fix / Workaround

Do not attempt to re-program Lock bits to present, or lower protection level.

8.1.2

Rev. A – C

Not sampled.

8.2

ATtiny5

8.2.1

Rev. D

1. ESD HBM (ESD STM 5.1) level ±1000V

The device meets ESD HBM (ESD STM 5.1) level ±1000V.

Problem Fix / Workaround

Always use proper ESD protection measures (Class 1C) when handling integrated circuits

before and during assembly.

2. Lock bits re-programming

Attempt to re-program Lock bits to present, or lower protection level (tampering attempt),

causes erroneously one, random line of Flash program memory to get erased. The Lock bits

will not get changed, as they should not.

Problem Fix / Workaround

Do not attempt to re-program Lock bits to present, or lower protection level.

8.2.2

Rev. A – C

Not sampled.