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TLE8366 bảng dữ liệu(PDF) 5 Page - Infineon Technologies AG |
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TLE8366 bảng dữ liệu(HTML) 5 Page - Infineon Technologies AG |
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5 / 19 page ![]() TLE8366 General Product Characteristics Data sheet 5 Rev. 1.0, 2009-05-18 4 General Product Characteristics 4.1 Absolute Maximum Ratings Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not designed for continuous repetitive operation. Absolute Maximum Ratings1) T j = -40 °C to +150 °C; all voltages with respect to ground (unless otherwise specified) 1) Not subject to production test, specified by design Pos. Parameter Symbol Limit Values Unit Conditions Min. Max. Voltages 4.1.1 Synchronization Input V SYNC -0.3 5.5 V – 6.2 V t < 10s2) 2) Exposure to those absolute maximum ratings for extended periods of time ( t > 10s) may affect device reliability 4.1.2 Compensation Input V COMP -0.3 5.5 V – 4.1.3 6.2 V t < 10s2) 4.1.4 Feedback Input V FB -0.3 10 V TLE8366EV50; TLE8366EV33 4.1.5 -0.3 5.5 V TLE8366EV 4.1.6 Buck Driver Supply Input V BDS V BUO - 0.3 V BUO + 5.5 V 4.1.7 Buck Switch Output V BUO -2.0 V VS + 0.3 V 4.1.8 Enable Input V EN -40 45 V 4.1.9 Supply Voltage Input V VS -0.3 45 V Temperatures 4.1.10 Junction Temperature T j -40 150 °C– 4.1.11 Storage Temperature T stg -55 150 °C– ESD Susceptibility 4.1.12 ESD Resistivity V ESD -2 2 kV HBM 3) 3) ESD susceptibility HBM according to EIA/JESD 22-A 114B (1.5k Ω,100pF). 4.1.13 ESD Resistivity to GND V ESD -500 500 V CDM 4) 4) ESD susceptibility, Charged Device Model “CDM” EIA/JESD22-C101 or ESDA STM5.3.1 4.1.14 ESD Resistivity corner pins to GND V ESD -750 750 V CDM 4) |
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