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CPC3720C bảng dữ liệu(PDF) 2 Page - Clare, Inc. |
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CPC3720C bảng dữ liệu(HTML) 2 Page - Clare, Inc. |
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2 / 4 page ![]() www.clare.com 2 CPC3720C R00A.7 Absolute Maximum Ratings are stress ratings. Stresses in excess of these ratings can cause permanent damage to the device. Functional operation of the device at conditions beyond those indicated in the operational sections of this data sheet is not implied. Absolute Maximum Ratings (@ 25˚ C) Electrical Characteristics Parameter Ratings Units Drain-to-Source Voltage 350 V Gate-to-Source Voltage ±20 V Total Package Dissipation 1.61 W Operational Temperature -55 to +125 º C Storage Temperature -55 to +125 º C 1 Mounted on FR4 board 1"x1"x0.062" Package I D (continuous) I D (pulsed) Power Dissipation @TA=25ºC θjcºC/W I DR I DRM SOT-89 130mA 600mA 1.6W1 15 130mA 600mA 1 Mounted on FR4 board 1"x1"x0.062" Thermal Characteristics Parameter Symbol Conditions Min Typ Max Units Drain-to-Source Breakdown Voltage BV DSX V GS= -5V, ID=100µA 350 - - V Gate-to-Source Off Voltage V GS(off) V DS= 10V, ID=1mA -1.6 -2.4 -3.9 V Change in V GS(off) with Temperatures d VGS(off)/dT V DS= 10V, ID=1mA - - 3.3 mV/ºC Gate Body Leakage Current I GSS V GS=±20V, VDS=0V - - 100 nA Drain-to-Source Leakage Current I D(off) V GS= -5V, VDS=Max Rating - - 1 µA V GS= -5V, VDS=0.8 Max Rating TA=125ºC - - 1 mA Saturated Drain-to-Source Current I DSS V GS= 0V, VDS=15V 130 - - mA Static Drain-to-Source ON-State Resistance R DS(on) V GS= 0V, ID=130mA - - 22 Ω Change in R DS(on) with Temperatures dR DS(on)/dT V GS= 0V, ID=130mA - - 0.9 %/ºC Forward Transconductance G FS I D= 100mA, VDS = 10V 225 - - m Input Capacitance C ISS V GS= -5V V DS= 25V f= 1Mhz - 70 350 pF Common Source Output Capacitance C OSS 20 60 Reverse Transfer Capacitance C RSS 10 60 Turn-ON Delay Time t d(on) V DD= 25V I D= 150mA V GS= 0V to -10V R GEN= 50Ω - 20 - ns Rise Time t r 10 Turn-OFF Delay Time t d(off) 20 Fall time t f 50 Source-Drain Diode Voltage Drop V SD V GS= -5V, ISD= 150mA - 0.6 1.8 V |
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