Document Number 5748

Issue 2

Semelab Plc reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed

to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use.

Semelab encourages customers to verify that datasheets are current before placing orders.

2N6845

IRFF9120

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

Reference to 25°C

f = 1MHz

Mosfet symbol showing the

integral reverse p-n junction diode

Drain – Source Breakdown Voltage

Temperature Coefficient of

Breakdown Voltage

Static Drain – Source On–State

Gate Threshold Voltage

Drain-to-Source Leakage Current

Forward Gate – Source Leakage

Reverse Gate – Source Leakage

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge

Gate – Source Charge

Gate – Drain (“Miller”) Charge

Turn–On Delay Time

Rise Time

Turn–Off Delay Time

Fall Time

Continuous Source Current

Pulse Source Current

Forward Turn–On Time

- 100

- 0.10

0.60

0.69

- 2

- 4

1.25

-25

-250

100

-100

380

170

45

4.3

16.3

1.3

4.7

1.0

9.0

60

100

50

70

- 4.0

- 16

- 4.8

200

3.1

V

V/°C

Ω

V

S

µA

nA

pF

nC

ns

A

V

ns

µC

STATIC ELECTRICAL RATINGS

Notes

1) Pulse Test: Pulse Width

≤ 300ms, δ≤ 2%

DYNAMIC CHARACTERISTICS

SOURCE – DRAIN DIODE CHARACTERISTICS

Negligible

D

G

S