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Motorola Thyristor Device Data

TRIACS

Silicon Bidirectional Thyristors

Designed for high performance full-wave ac control applications where high

noise immunity and high commutating di/dt are required.

• Blocking Voltage to 800 Volts

• On-State Current Rating of 8.0 Amperes RMS at 100°C

• Uniform Gate Trigger Currents in Three Modes

• High Immunity to dv/dt — 250 V/µs minimum at 125°C

• Minimizes Snubber Networks for Protection

• Industry Standard TO-220AB Package

• High Commutating di/dt — 6.5 A/ms minimum at 125°C

MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)

Symbol

Parameter

Value

Unit

VDRM

Peak Repetitive Off-State Voltage (1)

(– 40 to 125

°C, Sine Wave, 50 to 60 Hz, Gate Open)

MAC8D

MAC8M

MAC8N

400

600

800

Volts

IT(RMS)

On-State RMS Current

(60 Hz, TC = 100°C)

8.0

A

ITSM

Peak Non-repetitive Surge Current

(One Full Cycle, 60 Hz, TJ = 125°C)

80

A

I2t

Circuit Fusing Consideration (t = 8.3 ms)

26

A2sec

PGM

Peak Gate Power (Pulse Width

≤ 1.0 µs, TC = 80°C)

16

Watts

PG(AV)

Average Gate Power (t = 8.3 ms, TC = 80°C)

0.35

Watts

TJ

Operating Junction Temperature Range

– 40 to +125

°C

Tstg

Storage Temperature Range

– 40 to +150

°C

THERMAL CHARACTERISTICS

R

θJC

R

θJA

Thermal Resistance — Junction to Case

2.2

62.5

°C/W

TL

Maximum Lead Temperature for Soldering Purposes 1/8

″ from Case for 10 Seconds

260

°C

(1)

VDRM for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such that the

voltage ratings of the devices are exceeded.

Preferred devices are Motorola recommended choices for future use and best overall value.

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MAC8

SERIES

CASE 221A-06

(TO-220AB)

Style 4

MT2

MT1

MT2

G

TRIACS

8 AMPERES RMS

400 thru 800

VOLTS

*Motorola preferred devices

*