SSF2301C

ON CHARACTERISTICS (Note 3)

Gate Threshold Voltage

V

V =V

GS(th)

DS

-0.4

-0.9

V

V =-4.5V, I

GS

80

100

Drain-Source On-State Resistance

110

150

Forward Transconductance

g

V =-5V,I

FS

DS

6.5

S

DYNAMIC CHARACTERISTICS (Note4)

Input Capacitance

C

1100

PF

lss

Output Capacitance

200

PF

V =-10V,V

Reverse Transfer Capacitance

DS

F=1.0MHz

150

PF

SWITCHING CHARACTERISTICS (Note 4)

Turn-on Delay Time

t

18.5

nS

d(on)

Turn-on Rise Time

t

4.6

nS

r

Turn-Off Delay Time

35

nS

V =-10V,I

DD

V =-4.5V,R

Turn-Off Fall Time

GS

34.6

nS

Total Gate Charge

Q

9.6

nC

g

Gate-Source Charge

1.1

nC

V =-10V,I

Gate-Drain Charge

DS

2.6

nC

DRAIN-SOURCE DIODE CHARACTERISTICS

Diode Forward Voltage (Note 3)

V

V =0V,I =-0.75A

-1.2

V

SD

GS

S

Diode Forward Current (Note 2)

I

-2.4

A

S

NOTES:

1. Repetitive Rating: Pulse width limited by maximum junction temperature.

2. Surface Mounted on FR4 Board, t ≤ 10 sec.

3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.

4. Guaranteed by design, not subject to production testing.

©Silikron Semiconductor CO.,LTD.

2

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