WEITRON

http://www.weitron.com.tw

MGSF1P02

Note:

Input Capacitance

Output Capacitance

Transfer Capacitance(See FIG.6)

Drain-Source Breakdown Voltage

Gate-Threshold Voltage

Gate-body Leakage Current

Static Drain-to-Source On-Resistance

Static

Dynamic Characteristics

Switching Characteristics

Source-Drain Diode Characteristics

Characteristic

Symbol

Unit

Min

Typ

Max

20

-

-

V

1.0

1.7

2.4

V

-

-

-

1.0

10

100

nA

uA

0.235

0.375

0.350

0.500

130

120

60

PF

16

1.0

2.5

Q

8.0

6000

nS

pC

Electrical Characteristics

(TA=25 C Unless otherwise noted)

Zero Gate Voltage Drain Current

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

Continuous Current

Pulsed Current

Forward Voltage

I

-

-

-

-

-

1.5

+_ 20V,V =0V

DS

+_

Turn-On Delay Time

Rise Time

Turn-Off Delay Time

Fall Time

Gate Charge

(V

=15V, I =1.0A,

R =5 , )

0Ω

DD

D

L

T

(2)

S

VSD

ISM

0.6

0.75

-

1. Pulse Test: Pulse Width 300us, Duty Cycle 2%.

2. Switching characteristics are independent of operating junction temperature.

<_

<_

GS

A

V

Ohms

(2)