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PIC18F4321 bảng dữ liệu(PDF) 92 Page - Microchip Technology |
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PIC18F4321 bảng dữ liệu(HTML) 92 Page - Microchip Technology |
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92 / 402 page ![]() PIC18F2221/2321/4221/4321 FAMILY DS39689F-page 92 © 2009 Microchip Technology Inc. 8.5 Operation During Code-Protect Data EEPROM memory has its own code-protect bits in Configuration Words. External read and write operations are disabled if code protection is enabled. The microcontroller itself can both read and write to the internal data EEPROM, regardless of the state of the code-protect Configuration bit. Refer to Section 24.0 “Special Features of the CPU” for additional information. 8.6 Protection Against Spurious Write To protect against spurious EEPROM writes, various mechanisms have been implemented. On power-up, the WREN bit is cleared. In addition, writes to the EEPROM are blocked during the Power-up Timer period (TPWRT, parameter 33). The write initiate sequence and the WREN bit together help prevent an accidental write during Brown-out Reset, power glitch or software malfunction. 8.7 Using the Data EEPROM The data EEPROM is a high-endurance, byte addressable array that has been optimized for the storage of frequently changing data. Such data is typically updated at least one time within the number of writes defined by specification, D124. If any location storing data is not written at least this often, the data EEPROM array must be refreshed. For this reason, values that change infrequently, or not at all, should be stored in Flash program memory. A simple data EEPROM refresh routine is shown in Example 8-3. EXAMPLE 8-3: DATA EEPROM REFRESH ROUTINE Note: If data EEPROM is only used to store con- stants and/or data that changes often, an array refresh is likely not required. See specification, D124. CLRF EEADR ; Start at address 0 BCF EECON1, CFGS ; Set for memory BCF EECON1, EEPGD ; Set for Data EEPROM BCF INTCON, GIE ; Disable interrupts BSF EECON1, WREN ; Enable writes LOOP ; Loop to refresh array BSF EECON1, RD ; Read current address MOVLW 55h ; MOVWF EECON2 ; Write 55h MOVLW 0AAh ; MOVWF EECON2 ; Write 0AAh BSF EECON1, WR ; Set WR bit to begin write BTFSC EECON1, WR ; Wait for write to complete BRA $-2 INCFSZ EEADR, F ; Increment address BRA LOOP ; Not zero, do it again BCF EECON1, WREN ; Disable writes BSF INTCON, GIE ; Enable interrupts |
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