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LLSD103C bảng dữ liệu(PDF) 1 Page - Shanghai Lunsure Electronic Tech |
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LLSD103C bảng dữ liệu(HTML) 1 Page - Shanghai Lunsure Electronic Tech |
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1 / 2 page ![]() Features l Low Reverse Recovery Time l Low Reverse Capacitance l Low Forward Voltage Drop l Guard Ring Construction for Transient Protection Mechanical Data l Case: MiniMELF, Glass l Terminals: Solderable per MIL-STD-202, Method 208 l Polarity: Indicated by Cathode Band l Weight: 0.05 grams ( approx.) Maximum Ratings @ 25oC Unless Otherwise Specified Characteristic Symbol LLSD103A LLSD103B LLSD103C Peak Repetitive Reverse Voltage VRRM Working Peak Reverse Voltage VRWM 40V 30V 20V DC Blocking Voltage VR RMS Reverse Voltage VR(RMS) 28V 21V 14V Forward Continuous Current(Note1) IFM Maximum Single cycle surge 60Hz sine wave IFSM Power Dissipation(Note 1) Pd Thermal Resistance(Note 1) R Operation/Storage Temp. Range Tj, TSTG -55 to 150 o C 15A 350mA 400mW 250K/W Electrical Characteristics @ 25oC Unless Otherwise Specified Charateristic Symbol Min Typ Max Test Cond. Peak LLSD103A VR=30V Reverse LLSD103B IRM ----- ----- 5.0uA VR=20V Current LLSD103C VR=10V Maximum Forward VFM ----- ----- 0.37V IF=20mA Voltage Drop 0.60V IF=200mA Junction Capacitance Cj ----- 50 pF VR=0V, f=1.0MHz Reverse Recovery Time trr ----- 10 ns IF=IR=50mA to 200mA, recover to 0.1 I R Note: 1. Valid provided that electrodes are kept at ambient temperature LLSD103A THRU LLSD103C Schottky Barrier Switching Diode DIMENSION INCHES MM DIM MIN MAX MIN MAX NOTE A .134 .142 3.40 3.60 B .008 .016 0.20 0.40 C .055 .059 1.40 1.50 A B C Cathode Mark 0.030” 0.105 0.075” SUGGESTED SOLDER PAD LAYOUT www.cnelectr.com MINIMELF Shanghai Lunsure Electronic Technology Co.,Ltd Technology Co.,Ltd Fax:0086-21-57152769 |
Số phần tương tự - LLSD103C |
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Mô tả tương tự - LLSD103C |
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