1

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Single Silicon Switching Diodes

These Silicon Epitaxial Planar Diodes are designed for use in ultra high speed

switching applications. These devices are housed in the SC–59 package which is

designed for low power surface mount applications.

• Fast trr, < 3.0 ns

• Low CD, < 2.0 pF

• Available in 8 mm Tape and Reel

Use M1MA151/2AT1 to order the 7 inch/3000 unit reel.

Use M1MA151/2AT3 to order the 13 inch/10,000 unit reel.

Rating

Symbol

Value

Unit

Reverse Voltage

M1MA151AT1

VR

40

Vdc

M1MA152AT1

80

Peak Reverse Voltage

M1MA151AT1

VRM

40

Vdc

M1MA152AT1

80

Forward Current

IF

100

mAdc

Peak Forward Current

IFM

225

mAdc

Peak Forward Surge Current

IFSM(1)

500

mAdc

THERMAL CHARACTERISTICS

Rating

Symbol

Max

Unit

Power Dissipation

PD

200

mW

Junction Temperature

TJ

150

°C

Storage Temperature

Tstg

– 55 to + 150

°C

Characteristic

Symbol

Condition

Min

Max

Unit

Reverse Voltage Leakage Current

M1MA151AT1

IR

VR = 35 V

—

0.1

µAdc

M1MA152AT1

VR = 75 V

—

0.1

Forward Voltage

VF

IF = 100 mA

—

1.2

Vdc

Reverse Breakdown Voltage

M1MA151AT1

VR

IR = 100 µA

40

—

Vdc

M1MA152AT1

80

—

Diode Capacitance

CD

VR = 0, f = 1.0 MHz

—

2.0

pF

Reverse Recovery Time

trr(2)

IF = 10 mA, VR = 6.0 V,

RL = 100 Ω, Irr = 0.1 IR

—

3.0

ns

1. t = 1 SEC

2. trr Test Circuit

Thermal Clad is a trademark of the Bergquist Company

Preferred devices are Motorola recommended choices for future use and best overall value.

Order this document

by M1MA151AT1/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

M1MA151AT1

M1MA152AT1

SC–59 PACKAGE

SINGLE SILICON

SWITCHING DIODES

40/80 V–100 mA

SURFACE MOUNT

Motorola Preferred Devices

CASE 318D–03, STYLE 4

SC–59

2

1

3

ANODE

3

2

CATHODE

1

NO CONNECTION

REV 3