SSM6J409TU datasheet(4/6 Pages) TOSHIBA

tên linh kiện	SSM6J409TU

Giải thích chi tiết về linh kiện	Field-Effect Transistor Silicon P-Channel MOS Type (U-MOS V)

PDF	6 Pages

Scroll/Zoom	100%

nhà sản xuất	TOSHIBA [Toshiba Semiconductor]

Trang chủ	http://www.semicon.toshiba.co.jp/eng

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4 / 6 page

SSM6J409TU

2009-04-08

Drain current ID (A)

|Yfs| – ID

0.01

-100

-0.01

0.1

-0.1

-1

-10

0.03

0.3

Drain–source voltage VDS (V)

C – VDS

-0.1

-1

-10

-100

100

1000

5000

3000

300

500

Common Source

= 25 °C

= 1 MHz

VGS = 0 V

Ciss

Coss

Crss

Total Gate Charge Qg (nC)

Dynamic Input Characteristic

-2

-8

-6

-4

Common Source

ID = -9.5 A

= 25 °C

Vth – Ta

-0.8

−50

150

-0.2

-0.4

-0.6

-1.0

100

Common Source

VDS = -3 V

ID = -1 mA

VDD = -10 V

VDD = -16 V

Ambient temperature Ta (°C)

Drain current ID (A)

t – ID

-0.01

100

-0.1

1000

-1

-10

Common Source

VDD = -10 V

VGS = 0 to -2.5 V

= 25 °C

RG = 4.7 Ω

toff

ton

Drain–source voltage VDS (V)

IDR – VDS

100

0.01

0. 1

0.001

0.2

0.6

0.4

1.0

0.8

1.2

Common Source

VGS = 0 V

= 25 °C

IDR

100 °C

25 °C

−25 °C

Common Source

VDS = -3 V

= 25 °C

-0.001

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