25LC080CT-ESLASHMS datasheet(12/28 Pages) MICROCHIP

12 / 28 page

25XX080C/D

DS22151A-page 12

2.7

Data Protection

The following protection has been implemented to

prevent inadvertent writes to the array:

• The write enable latch is reset on power-up

• A write enable instruction must be issued to set

the write enable latch

• After a byte write, page write or STATUS register

write, the write enable latch is reset

•CS must be set high after the proper number of

clock cycles to start an internal write cycle

• Access to the array during an internal write cycle

is ignored and programming is continued

2.8

Power-On State

The 25XX080C/D powers on in the following state:

• The device is in low-power Standby mode

(CS = 1)

• The write enable latch is reset

• SO is in high-impedance state

• A high-to-low-level transition on CS is required to

enter active state

TABLE 2-4:

WRITE-PROTECT FUNCTIONALITY MATRIX

WEL

(SR bit 1)

WPEN

(SR bit 7)

(pin 3)

Protected Blocks

Unprotected Blocks

STATUS Register

0xx

Protected

10x

Protected

Writable

(low)

Protected

Writable

Protected

(high)

Protected

Writable

= don’t care

25LC080CT-E/MS bảng dữ liệu(PDF) 12 Page - Microchip Technology

25LC080CT-E/MS bảng dữ liệu(HTML) 12 Page - Microchip Technology

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28

bảng dữ liệu tải về

Link URL