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MCP6021 bảng dữ liệu(PDF) 5 Page - Microchip Technology

tên linh kiện MCP6021
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© 2009 Microchip Technology Inc.
DS21685D-page 5
MCP6021/1R/2/3/4
TEMPERATURE CHARACTERISTICS
FIGURE 1-1:
Timing diagram for the CS
pin on the MCP6023.
1.1
Test Circuits
The test circuits used for the DC and AC tests are
shown in Figure 1-2 and Figure 1-3. The bypass
capacitors are laid out according to the rules discussed
in Section 4.7 “Supply Bypass”.
FIGURE 1-2:
AC and DC Test Circuit for
Most Non-Inverting Gain Conditions.
FIGURE 1-3:
AC and DC Test Circuit for
Most Inverting Gain Conditions.
Electrical Specifications: Unless otherwise indicated, VDD = +2.5V to +5.5V and VSS = GND.
Parameters
Sym
Min
Typ
Max
Units
Conditions
Temperature Ranges
Industrial Temperature Range
TA
-40
+85
°C
Extended Temperature Range
TA
-40
+125
°C
Operating Temperature Range
TA
-40
+125
°C
Note 1
Storage Temperature Range
TA
-65
+150
°C
Thermal Package Resistances
Thermal Resistance, 5L-SOT-23
θ
JA
256
°C/W
Thermal Resistance, 8L-PDIP
θ
JA
—85
°C/W
Thermal Resistance, 8L-SOIC
θ
JA
163
°C/W
Thermal Resistance, 8L-MSOP
θ
JA
206
°C/W
Thermal Resistance, 8L-TSSOP
θ
JA
124
°C/W
Thermal Resistance, 14L-PDIP
θ
JA
—70
°C/W
Thermal Resistance, 14L-SOIC
θ
JA
120
°C/W
Thermal Resistance, 14L-TSSOP
θ
JA
100
°C/W
Note
1:
The industrial temperature devices operate over this extended temperature range, but with reduced performance. In any
case, the internal junction temperature (TJ) must not exceed the absolute maximum specification of 150°C.
High-Z
tON
CS
tOFF
VOUT
-50 nA
High-Z
ISS
ICS
10 nA
10 nA
10 nA
-50 nA
-1 mA
Amplifier On
(typical)
(typical)
(typical)
(typical)
(typical)
(typical)
VDD
MCP6021
2k
Ω
2k
Ω
1k
Ω
VOUT
VIN
VDD/2
1µF
CL
RL
VL
0.1 µF
CB1
RN
RG
RF
60 pF
10 k
Ω
CB2
VDD
MCP6021
2k
Ω
1k
Ω
VOUT
VDD/2
VIN
1µF
VL
0.1 µF
2k
Ω
CL
RL
CB1
RN
RG
RF
60 pF
10 k
Ω
CB2



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