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MCP6141-E/MS bảng dữ liệu(PDF) 4 Page - Microchip Technology |
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MCP6141-E/MS bảng dữ liệu(HTML) 4 Page - Microchip Technology |
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4 / 38 page  MCP6141/2/3/4 DS21668D-page 4 © 2009 Microchip Technology Inc. AC ELECTRICAL CHARACTERISTICS MCP6143 CHIP SELECT (CS) ELECTRICAL CHARACTERISTICS FIGURE 1-1: Chip Select (CS) Timing Diagram (MCP6143 only). Electrical Characteristics: Unless otherwise indicated, VDD = +1.4V to +5.5V, VSS =GND, TA =+25°C, VCM =VDD/2, VOUT ≈ VDD/2, VL =VDD/2, RL = 1 MΩ to VL, CL = 60 pF and CS is tied low (refer to Figure 1-2 and Figure 1-3). Parameters Sym Min Typ Max Units Conditions AC Response Gain Bandwidth Product GBWP — 100 — kHz Slew Rate SR — 24 — V/ms Phase Margin PM — 60 — ° G = +10 V/V Noise Input Voltage Noise Eni —5.0 — µVP-P f = 0.1 Hz to 10 Hz Input Voltage Noise Density eni —170 — nV/ √Hz f = 1 kHz Input Current Noise Density ini —0.6 — fA/ √Hz f = 1 kHz Electrical Characteristics: Unless otherwise indicated, VDD = +1.4V to +5.5V, VSS =GND, TA =+25°C, VCM =VDD/2, VOUT ≈ VDD/2, VL =VDD/2, RL = 1 MΩ to VL, and CL = 60 pF (refer to Figure 1-2 and Figure 1-3). Parameters Sym Min Typ Max Units Conditions CS Low Specifications CS Logic Threshold, Low VIL VSS —VSS+0.3 V CS Input Current, Low ICSL —5— pA CS = VSS CS High Specifications CS Logic Threshold, High VIH VDD–0.3 — VDD V CS Input Current, High ICSH —5— pA CS = VDD CS Input High, GND Current ISS —-20 — pA CS = VDD Amplifier Output Leakage, CS High IOLEAK —20— pA CS = VDD Dynamic Specifications CS Low to Amplifier Output Turn-on Time tON — 2 50 ms G = +1 V/V, CS = 0.3V to VOUT = 0.9VDD/2 CS High to Amplifier Output High-Z tOFF — 10 — µs G = +1 V/V, CS = VDD–0.3V to VOUT = 0.1VDD/2 Hysteresis VHYST —0.6 — V VDD = 5.0V VIL High-Z tON VIH CS tOFF VOUT -20 pA High-Z ISS ICS 5 pA (typical) 5 pA (typical) -20 pA -0.6 µA (typical) (typical) (typical) |
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