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MCP3201T-CI/MS bảng dữ liệu(PDF) 3 Page - Microchip Technology |
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MCP3201T-CI/MS bảng dữ liệu(HTML) 3 Page - Microchip Technology |
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3 / 36 page ![]() © 2008 Microchip Technology Inc. DS21290E-page 3 MCP3201 1.0 ELECTRICAL CHARACTERISTICS 1.1 Maximum Ratings† VDD...................................................................................7.0V All inputs and outputs w.r.t. VSS ................ -0.6V to VDD +0.6V Storage temperature .....................................-65°C to +150°C Ambient temp. with power applied ................-65°C to +125°C ESD protection on all pins (HBM) .................................> 4 kV †Notice: Stresses above those listed under “Maximum ratings” may cause permanent damage to the device. This is a stress rating only and functional operation of the device at those or any other conditions above those indicated in the operational listings of this specification is not implied. Exposure to maximum rating conditions for extended periods may affect device reliability. ELECTRICAL CHARACTERISTICS Electrical Specifications: All parameters apply at VDD = 5V, VSS = 0V, VREF = 5V, TA = -40°C to +85°C, fSAMPLE = 100 ksps, and fCLK = 16*fSAMPLE, unless otherwise noted. Parameter Sym Min Typ Max Units Conditions Conversion Rate: Conversion Time tCONV — — 12 clock cycles Analog Input Sample Time tSAMPLE 1.5 clock cycles Throughput Rate fSAMPLE — — 100 50 ksps ksps VDD = VREF = 5V VDD = VREF = 2.7V DC Accuracy: Resolution 12 bits Integral Nonlinearity INL — — ±0.75 ±1 ±1 ±2 LSB LSB MCP3201-B MCP3201-C Differential Nonlinearity DNL — ±0.5 ±1 LSB No missing codes over temperature Offset Error — ±1.25 ±3 LSB Gain Error — ±1.25 ±5 LSB Dynamic Performance: Total Harmonic Distortion THD — -82 — dB VIN = 0.1V to 4.9V@1 kHz Signal to Noise and Distortion (SINAD) SINAD — 72 — dB VIN = 0.1V to 4.9V@1 kHz Spurious Free Dynamic Range SFDR — 86 — dB VIN = 0.1V to 4.9V@1 kHz Reference Input: Voltage Range 0.25 — VDD V Note 2 Current Drain — — 100 .001 150 3 µA µA CS = VDD = 5V Analog Inputs: Input Voltage Range (IN+) IN+ IN- — VREF+IN- V Input Voltage Range (IN-) IN- VSS-100 VSS+100 mV Leakage Current — 0.001 ±1 µA Switch Resistance RSS — 1K — W See Figure 4-1 Sample Capacitor CSAMPLE — 20 — pF See Figure 4-1 Digital Input/Output: Data Coding Format Straight Binary High Level Input Voltage VIH 0.7 VDD —— V Low Level Input Voltage VIL — — 0.3 VDD V Note 1: This parameter is established by characterization and not 100% tested. 2: See graph that relates linearity performance to VREF level. 3: Because the sample cap will eventually lose charge, effective clock rates below 10 kHz can affect linearity performance, especially at elevated temperatures. See Section 6.2 “Maintaining Minimum Clock Speed” for more information. |
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