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information contained herein without notice.

V5

MA4SW510

ADVANCED: Data Sheets contain information regarding a product M/A-COM is considering for

development. Performance is based on target specifications, simulated results, and/or prototype

measurements. Commitment to develop is not guaranteed.

PRELIMINARY: Data Sheets contain information regarding a product M/A-COM has under develop-

ment. Performance is based on engineering tests. Specifications are typical. Mechanical outline has

been fixed. Engineering samples and/or test data may be available. Commitment to produce in

volume is not guaranteed.

HMIC™ Silicon SP5T PIN Diode Switch

RoHS Compliant

Operation of the MA4SW510 Switch

The simultaneous application of a negative DC current to the low loss port and positive DC current to the isolated

ports as shown below in Fig.1 is required for proper operation of the switch. The backside area of the die is the

RF and DC ground return and the DC return is through the common Port J1. A constant current source should be

used to supply the DC control currents. The control voltages at these points will not exceed ±1.5 volts for supply

currents up to ±20mA. In the low loss state, the series diode must be forward biased and the shunt diode reverse

biased. On all isolated ports, the shunt diode is forward biased and the series diode is reverse biased. A typical

bias network design that will produce >30dB RF to DC isolation is shown below in Figure 1 .

The optimum insertion loss, P1dB, IP3, and switching speed are attained by using a voltage pull-up resistor in the

DC return path, J1. A minimum value of |-2V| is recommended using a standard, ± 5V TTL controlled PIN driver

such as M/A-COM Tech’s MADR-007097-000100 & MADR-009190-000100 used in tandem.

Typical 2 – 18 GHz Bias Network

MA4SW510 Die

100 Ω

39 pF

22 nH

22 pF

39 pF

J1

22 nH

22 pF

J2

J3

J5

J6

J4

Fig. 1