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STM8L151C4U6 bảng dữ liệu(PDF) 73 Page - STMicroelectronics |
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STM8L151C4U6 bảng dữ liệu(HTML) 73 Page - STMicroelectronics |
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73 / 101 page ![]() STM8L151xx, STM8L152xx Electrical parameters Doc ID 15962 Rev 2 73/101 8.3.5 Memory characteristics TA = -40 to 125 °C unless otherwise specified. Table 30. RAM and hardware registers Symbol Parameter Conditions Min Typ Max Unit VRM Data retention mode (1) 1. Minimum supply voltage without losing data stored in RAM (in Halt mode or under Reset) or in hardware registers (only in Halt mode). Guaranteed by characterization, not tested in production. Flash memory Halt mode (or Reset) 1.4 V Table 31. Flash program memory Symbol Parameter Conditions Min Typ Max (1) Unit VDD Operating voltage (all modes, read/write/erase) fSYSCLK = 16 MHz 1.65 3.6 V tprog Programming time for 1 or 128 bytes (block) erase/write cycles (on programmed byte) TBD ms Programming time for 1 to 128 bytes (block) write cycles (on erased byte) TBD ms Iprog Programming/ erasing consumption TA=+25 °C, VDD = 3.0 V TBD mA TA=+25 °C, VDD = 1.8 V TBD tRET Data retention (program memory) after 10000 erase/write cycles at TA=+85 °C TRET=+55 °C TBD(1) years Data retention (data memory) after 10000 erase/write cycles at TA=+85 °C TRET=+55 °C TBD(1) Data retention (data memory) after 10000 erase/write cycles at TA=+85 °C TRET=+85 °C TBD(1) NRW Erase/write cycles (program memory) See notes (1)(2) TBD(1) kcycles Erase/write cycles (data memory) See notes (1)(3) TBD(1) (4) 1. Data based on characterization results, not tested in production. 2. Retention guaranteed after cycling is 10 years @ 55 °C. 3. Retention guaranteed after cycling is 1 year @ 55 °C. 4. Data based on characterization performed on the whole data memory. |
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