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STM8L101F2P3ATR bảng dữ liệu(PDF) 48 Page - STMicroelectronics |
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STM8L101F2P3ATR bảng dữ liệu(HTML) 48 Page - STMicroelectronics |
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48 / 77 page ![]() Electrical parameters STM8L101xx 48/77 Doc ID 15275 Rev 7 9.3.5 Memory characteristics TA = -40 to 125 °C unless otherwise specified. Table 24. RAM and hardware registers Symbol Parameter Conditions Min Typ Max Unit VRM Data retention mode (1) 1. Minimum supply voltage without losing data stored in RAM (in Halt mode or under Reset) or in hardware registers (only in Halt mode). Guaranteed by characterization, not tested in production. Flash memory Halt mode (or Reset) 1.4 - - V Table 25. Flash program memory Symbol Parameter Conditions Min Typ Max (1) Unit VDD Operating voltage (all modes, read/write/erase) fMASTER = 16 MHz 1.65 - 3.6 V tprog Programming time for 1 or 64 bytes (block) erase/write cycles (on programmed byte) -- 6 ms Programming time for 1 to 64 bytes (block) write cycles (on erased byte) -- 3 ms Iprog Programming/ erasing consumption TA=+25 °C, VDD = 3.0 V - 0.7 - mA TA=+25 °C, VDD = 1.8 V - - tRET Data retention (program memory) after 10k erase/write cycles at TA = +85 °C TRET = 55 °C 20(1) -- years Data retention (data memory) after 10k erase/write cycles at TA = +85 °C TRET = 55 °C 20(1) -- Data retention (data memory) after 300k erase/write cycles at TA = +125 °C TRET = 85 °C 1(1) -- NRW Erase/write cycles (program memory) See notes (1)(2) 10(1) -- kcycles Erase/write cycles (data memory) See notes (1)(3) 300(1)(4) -- 1. Data based on characterization results, not tested in production. 2. Retention guaranteed after cycling is 10 years @ 55 °C. 3. Retention guaranteed after cycling is 1 year @ 55 °C. 4. Data based on characterization performed on the whole data memory (2 Kbytes). |
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