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STM8L101F2P3ATR bảng dữ liệu(PDF) 48 Page - STMicroelectronics

tên linh kiện STM8L101F2P3ATR
Giải thích chi tiết về linh kiện  8-bit ultralow power microcontroller with up to 8 Kbytes Flash, multifunction timers, comparators, USART, SPI, I2C
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STM8L101F2P3ATR bảng dữ liệu(HTML) 48 Page - STMicroelectronics

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Electrical parameters
STM8L101xx
48/77
Doc ID 15275 Rev 7
9.3.5
Memory characteristics
TA = -40 to 125 °C unless otherwise specified.
Table 24.
RAM and hardware registers
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VRM
Data retention mode (1)
1.
Minimum supply voltage without losing data stored in RAM (in Halt mode or under Reset) or in hardware
registers (only in Halt mode). Guaranteed by characterization, not tested in production.
Flash memory
Halt mode (or Reset)
1.4
-
-
V
Table 25.
Flash program memory
Symbol
Parameter
Conditions
Min
Typ
Max
(1)
Unit
VDD
Operating voltage
(all modes, read/write/erase)
fMASTER = 16 MHz
1.65
-
3.6
V
tprog
Programming time for 1 or 64 bytes (block)
erase/write cycles (on programmed byte)
--
6
ms
Programming time for 1 to 64 bytes (block)
write cycles (on erased byte)
--
3
ms
Iprog
Programming/ erasing consumption
TA=+25 °C, VDD = 3.0 V
-
0.7
-
mA
TA=+25 °C, VDD = 1.8 V
-
-
tRET
Data retention (program memory) after 10k
erase/write cycles
at TA = +85 °C
TRET = 55 °C
20(1)
--
years
Data retention (data memory) after 10k
erase/write cycles
at TA = +85 °C
TRET = 55 °C
20(1)
--
Data retention (data memory) after 300k
erase/write cycles
at TA = +125 °C
TRET = 85 °C
1(1)
--
NRW
Erase/write cycles (program memory)
See notes (1)(2)
10(1)
--
kcycles
Erase/write cycles (data memory)
See notes (1)(3)
300(1)(4)
--
1.
Data based on characterization results, not tested in production.
2.
Retention guaranteed after cycling is 10 years @ 55 °C.
3.
Retention guaranteed after cycling is 1 year @ 55 °C.
4.
Data based on characterization performed on the whole data memory (2 Kbytes).



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