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STC4516S8RG bảng dữ liệu(PDF) 2 Page - Stanson Technology

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Giải thích chi tiết về linh kiện  Complementary Dual Enhancement Mode MOSFET
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nhà sản xuất  STANSON [Stanson Technology]
Trang chủ  http://www.stansontech.com
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STC4516
Complementary Dual Enhancement Mode MOSFET
8.5A for N Channel / -7.2A for P Channl
STANSON TECHNOLOGY
120 Bentley Square, Mountain View, Ca 94040 USA
http://www.stansontech.com
STC4516 2008 V1
ABSOULTE MAXIMUM RATINGS (Ta = 25℃ unless otherwise noted )
P-Channel
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
-30
V
Gate-Source Voltage
VGSS
+/-20
V
Continuous Drain Current
TA=25℃
TA=70℃
ID
-7.2
-5.6
A
Pulsed Drain Current
IDM
-20
A
Continuous Source Current (Diode Conduction)
IS
-2.3
A
Power Dissipation
TA=25℃
TA=70℃
PD
2.8
1.8
W
Operation Junction Temperature
TJ
-55/150
℃
Storage Temperature Range
TSTG
-55/150
℃
Thermal Resistance-Junction to Ambient
RθJA
80
/W
℃
N-Channel
Parameter
Symbol
Typical
Unit
Drain-Source Voltage
VDSS
30
V
Gate-Source Voltage
VGSS
+/-20
V
Continuous Drain Current
TA=25℃
TA=70℃
ID
8.5
7.5
A
Pulsed Drain Current
IDM
20
A
Continuous Source Current (Diode Conduction)
IS
2.3
A
Power Dissipation
TA=25℃
TA=100℃
PD
2.5
1.6
W
Operation Junction Temperature
TJ
-55/150
℃
Storage Temperature Range
TSTG
-55/150
℃
Thermal Resistance-Junction to Ambient
RθJA
80
/W
℃



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