EEPROM

EEPROM

EEPROM

EEPROM

EEPROM

AS28C010

AS28C010

Rev. 1.5 5/06

Austin Semiconductor, Inc. reserves the right to change products or specifications without notice.

1

Austin Semiconductor, Inc.

For more products and information

please visit our web site at

www.austinsemiconductor.com

128K x 8 EEPROM

EEPROM Memory

5 Volt, Byte Alterable

AVAILABLE AS MILITARY

SPECIFICATIONS

SMD 5962-38267

MIL-PRF-38535

FEATURES

Access speed: 120, 150, 200, and 250ns

Data Retention: 100 Years

Low power, active current: 50mA, standby current: 500uA

Single +5V (+10%) power supply

Data Polling and Toggle

Erase/Write Endurance (10,000 byte mode / 100,000 page

mode)

Software Data protection Algorithm

Automatic , Self-Timed Byte Write

Automatic Programming:

Automatic Page Write: 10ms (MAX)

OPTIONS

MARKINGS

Timing

120ns access

-12

150ns access

-15

200ns access

-20

250ns access

-25

Packages

Ceramic Flat Pack

F

CerDIP, 600 mil

CW

Operating Temperature Ranges

XT

IT

-Full Military Class M Processing

883C

*NOTE: Package lid is connected to ground (Vss).

GENERAL DESCRIPTION

The Austin Semiconductor, Inc. AS28C010 is a 1 Megabit CMOS

Electrically Erasable Programmable Read Only Memory (EEPROM)

organized as 131, 072 x 8 bits. The AS28C010 is capable of in system

electrical Byte and Page reprogrammability.

The AS28C010 achieves high speed access, low power

consumption, and a high level of reliability by employing advanced

CMOS process and circuitry technology.

This device has a 256-Byte Page Programming function to make its

erase and write operations faster. The AS28C010 features Data

Polling and a toggle signal to indicate completion of erase and program-

ming operations.

This EEPROM provides several levels of data protection., in

addition to noise protection on the WE signal and write inhibit during

power on and off. Software data protection is implemented using

JEDEC

Optional

Standard

algorithm.

The AS28C010 is designed for high reliability in the most

demanding applications. Data retention is specified for 100 years and

erase/write endurance is guaranteed to a minimum of 100,000 cycles in

the Page Mode and 10,000 cycles in the Byte Mode.

PIN ASSIGNMENT

(Top View)

32-Pin CFP (F), 32-Pin CerDIP (CW)

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

32

31

30

29

28

27

26

25

24

23

22

21

20

19

18

17

NC

A16

A15

A12

A7

A6

A5

A4

A3

A2

A1

A0

I/O 0

I/O 1

I/O 2

Vss

Vcc

WE\

NC

A14

A13

A8

A9

A11

OE\

A10

CE\

I/O 7

I/O 6

I/O 5

I/O 4

I/O 3