MAX2602ESA datasheet(3/6 Pages) MAXIM

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3.6V, 1W RF Power Transistors

for 900MHz Applications

_______________________________________________________________________________________

1.0

COLLECTOR CURRENT

0.2

0.8

VCE (V)

0.6

0.4

VBB = 1.00V

VBB = 0.95V

VBB = 0.90V

VBB = 0.85V

VBB = 0.80V

0.4

TWO-TONE OUTPUT POWER AND IM3

vs. COLLECTOR CURRENT

ICC (A)

0.6

0.8

0.5

0.7

POUT

IM3

POUT, IM3, AND IM5

ARE RMS COMPOSITE

TWO-TONE POWER LEVELS

TWO-TONE OUTPUT POWER, IM3, IM5

vs. INPUT POWER

-5

INPUT POWER (dBm)

POUT

IM5

IM3

POUT, IM3, AND IM5

ARE RMS COMPOSITE

TWO-TONE POWER

LEVELS

TWO-TONE OUTPUT POWER, IM3, IM5

vs. INPUT POWER (f = 433MHz)

-5

INPUT POWER (dBm)

POUT

IM5

IM3

POUT, IM3, AND IM5

ARE RMS COMPOSITE

TWO-TONE

POWER LEVELS

-20

-22

-24

-26

-28

ACPR vs. OUTPUT POWER

(IS-54

π/4 DQPSK MODULATION, VBB = 0.85V)

-40

OUTPUT POWER (dBm)

-30

-32

-34

-36

-38

3.0V

3.6V

4.8V

4.2V

COLLECTOR EFFICIENCY vs. OUTPUT POWER

(IS-54

π/4 DQPSK MODULATION, VBB = 0.85V)

OUTPUT POWER (dBm)

3.0V

3.6V

4.8V

4.2V

POUT, IM3, AND IM5

ARE RMS COMPOSITE

TWO-TONE POWER

LEVELS

__________________________________________Typical Operating Characteristics

(Test Circuit of Figure 1, input/output matching networks optimized for specific measurement frequency, VCC = 3.6V, VBB = 0.750V,

POUT = 30dBm, ZLOAD = ZSOURCE = 50Ω, f = 836MHz, TA = +25°C, unless otherwise noted.)

NAME

—

1, 8

Transistor Collector

2, 3, 6, 7, Slug

Transistor Emitter

BIAS

4, 5

Transistor Base

Anode of the Biasing Diode that matches the thermal and process char-

acteristics of the power transistor. Requires a high-RF-impedance, low-

DC-impedance (e.g., inductor) connection to the transistor base (Pin 4).

Current through the biasing diode (into Pin 3) is proportional to 1/15 the

collector current in the transistor.

FUNCTION

MAX2601

MAX2602

1, 8

2, 6, 7, Slug

4, 5

______________________________________________________________Pin Description

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