BSP52T1

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Characteristics

Symbol

Min

Max

Unit

OFF CHARACTERISTICS

Collector-Base Breakdown Voltage

(IC = 100 µAdc, IE = 0)

V(BR)CBO

90

—

Vdc

Emitter-Base Breakdown Voltage

(IE = 10 µAdc, IC = 0)

V(BR)EBO

5.0

—

Vdc

Collector-Emitter Cutoff Current

(VCE = 80 Vdc, VBE = 0)

ICES

—

10

µAdc

Emitter-Base Cutoff Current

(VEB = 4.0 Vdc, IC = 0)

IEBO

—

10

µAdc

ON CHARACTERISTICS (2)

DC Current Gain

(IC = 150 mAdc, VCE = 10 Vdc)

(IC = 500 mAdc, VCE = 10 Vdc)

hFE

1000

2000

—

—

—

Collector-Emitter Saturation Voltage

(IC = 500 mAdc, IB = 0.5 mAdc)

VCE(sat)

—

1.3

Vdc

Base-Emitter On Voltage

(IC = 500 mAdc, IB = 0.5 mAdc)

VBE(on)

—

1.9

Vdc

2. Pulse Test: Pulse Width

≤ 300 µs, Duty Cycle ≤ 2.0%