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APT80GA90LD40 bảng dữ liệu(PDF) 9 Page - Microsemi Corporation |
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APT80GA90LD40 bảng dữ liệu(HTML) 9 Page - Microsemi Corporation |
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9 / 9 page ![]() Dynamic Characteristics TJ = 25°C unless otherwise specified APT80GA90LD40 Microsemi’s products are covered by one or more of U.S. patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743, 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. US and Foreign patents pending. All Rights Reserved. APT10035LLL 4 3 1 2 5 5 Zero 1 2 3 4 di F/dt - Rate of Diode Current Change Through Zero Crossing. I F - Forward Conduction Current I RRM - Maximum Reverse Recovery Current. trr - Reverse Recovery Time, measured from zero crossing where diode Qrr - Area Under the Curve Defined by IRRM and trr. current goes from positive to negative, to the point at which the straight line through IRRM and 0.25 IRRM passes through zero. Figure 9. Diode Test Circuit Figure 10, Diode Reverse Recovery Waveform and Definitions 0.25 IRRM PEARSON 2878 CURRENT TRANSFORMER di F/dt Adjust 30 μH D.U.T. +18V 0V V r trr/Qrr Waveform 19.51 (.768) 20.50 (.807) 19.81 (.780) 21.39 (.842) 25.48 (1.003) 26.49 (1.043) 2.29 (.090) 2.69 (.106) 0.76 (.030) 1.30 (.051) 3.10 (.122) 3.48 (.137) 4.60 (.181) 5.21 (.205) 1.80 (.071) 2.01 (.079) 2.59 (.102) 3.00 (.118) 0.48 (.019) 0.84 (.033) Collector Emitter Gate Dimensions in Millimeters and (Inches) 2.29 (.090) 2.69 (.106) 5.79 (.228) 6.20 (.244) 2.79 (.110) 3.18 (.125) 5.45 (.215) BSC 2-Plcs. TO-264 (L) Package Outline (Cathode) (Anode) |
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