APT80GA60B datasheet(3/6 Pages) MICROSEMI

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Typical Performance Curves

APT80GA60B_S

100

125

150

100

125

150

100

150

200 240 280

120

160

200

240

280

320

360

100

125

150

175

200

225

250

275

300

100

125

150

250μs PULSE

TEST<0.5 % DUTY

CYCLE

J = 25°C.

250μs PULSE TEST

<0.5 % DUTY CYCLE

GE = 15V.

250μs PULSE TEST

<0.5 % DUTY CYCLE

C = 23.5A

C = 47A

C = 94A

C = 47A

C = 94A

12V

15V

C = 47A

J = 25°C

CE = 480V

CE = 300V

CE = 120V

J= 25°C

J= -55°C

GE = 15V

J= 55°C

J= 150°C

CE, COLLECTOR-TO-EMITTER VOLTAGE (V)

FIGURE 1, Output Characteristics (T

= 25°C)

J= 25°C

J= 125°C

CE, COLLECTOR-TO-EMITTER VOLTAGE (V)

FIGURE 2, Output Characteristics (T

= 25°C)

J= 125°C

GE, GATE-TO-EMITTER VOLTAGE (V)

FIGURE 3, Transfer Characteristics

GE, GATE-TO-EMITTER VOLTAGE (V)

FIGURE 5, On State Voltage vs Gate-to-Emitter Voltage

GATE CHARGE (nC)

FIGURE 4, Gate charge

J, Junction Temperature (°C)

FIGURE 6, On State Voltage vs Junction Temperature

C, Case Temperature (°C)

FIGURE 8, DC Collector Current vs Case Temperature

0.75

0.80

0.85

0.90

0.95

1.00

1.05

1.10

-.50 -.25

75 100 125 150

J, JUNCTION TEMPERATURE

FIGURE 7, Threshold Voltage vs Junction Temperature

C = 23.5A

10V

13V

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