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APT43GA90S bảng dữ liệu(PDF) 2 Page - Microsemi Corporation |
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APT43GA90S bảng dữ liệu(HTML) 2 Page - Microsemi Corporation |
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2 / 6 page ![]() Dynamic Characteristics TJ = 25°C unless otherwise specified 1 Repetitive Rating: Pulse width and case temperature limited by maximum junction temperature. 2 Pulse test: Pulse Width < 380μs, duty cycle < 2%. See Mil-Std-750 Method 3471 3 R G is external gate resistance, not including internal gate resistance or gate driver impedance. (MIC4452) 4 E on1 is the inductive turn-on energy of the IGBT only, without the effect of a commutating diode reverse recovery current adding to the IGBT turn-on switching loss. It is measured by clamping the inductance with a silicon carbide Schottky diode. 5 E off is the clamped inductive turn-off energy measured in accordance with JEDEC standard JESD24-1. Microsemi reserves the right to change, without notice, the specifications and information contained herein. APT43GA90B_S Symbol Parameter Test Conditions Min Typ Max Unit C ies Input Capacitance Capacitance V GE = 0V, VCE = 25V f = 1MHz 2465 pF C oes Output Capacitance 227 C res Reverse Transfer Capacitance 34 Q g 2 Total Gate Charge Gate Charge V GE = 15V V CE= 450V I C = 25A 116 Q ge Gate-Emitter Charge 18 nC Q gc Gate- Collector Charge 44 SSOA Switching Safe Operating Area T J = 150°C, RG = 4.7Ω, VGE = 15V, L= 100uH, V CE = 900V 129 A t d(on) Turn-On Delay Time Inductive Switching (25°C) V CC = 600V V GE = 15V I C = 25A R G = 4.7Ω 3 T J = +25°C 12 ns t r Current Rise Time 16 t d(off) Turn-Off Delay Time 82 t f Current Fall Time 57 E on1 Turn-On Switching Energy 875 μJ E off 5 Turn-Off Switching Energy 425 t d(on Turn-On Delay Time Inductive Switching (125°C) V CC = 600V V GE = 15V I C = 25A R G = 4.7Ω 3 T J = +125°C 12 ns t r Current Rise Time 16 t d(off) Turn-Off Delay Time 117 t f Current Fall Time 129 E on1 Turn-On Switching Energy 1660 μJ E off 5 Turn-Off Switching Energy 1000 |
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