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FN6607.2

October 8, 2008

Die Characteristics

DIE DIMENSIONS:

2030µm x 2030µm (~80 mils x 80 mils)

Thickness: 483µm ± 25.4µm (19 mils ± 1 mil)

INTERFACE MATERIALS:

Glassivation:

Type: PSG (Phosphorous Silicon Glass)

Thickness: 8.0kÅ ± 1.0kÅ

Top Metallization:

Type: AlSiCu

Thickness: 16.0kÅ ± 2kÅ

Substrate:

Radiation Hardened Silicon Gate, Dielectric Isolation

Backside Finish:

Silicon

ASSEMBLY RELATED INFORMATION:

Substrate Potential:

Unbiased (DI)

ADDITIONAL INFORMATION:

Worst Case Current Density:

Transistor Count:

66

Metallization Mask Layout

ISL7119RH

ISL7119RH