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BD679 bảng dữ liệu(PDF) 2 Page - Motorola, Inc

tên linh kiện BD679
Giải thích chi tiết về linh kiện  Plastic Medium-Power Silicon NPN Darlingtons
PDF  4 Pages
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nhà sản xuất  MOTOROLA [Motorola, Inc]
Trang chủ  http://www.freescale.com
Logo MOTOROLA - Motorola, Inc

BD679 bảng dữ liệu(HTML) 2 Page - Motorola, Inc

  BD679 Datasheet HTML 1Page - Motorola, Inc BD679 Datasheet HTML 2Page - Motorola, Inc BD679 Datasheet HTML 3Page - Motorola, Inc BD679 Datasheet HTML 4Page - Motorola, Inc  
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BD675 BD675A BD677 BD677A BD679 BD679A BD681
2
Motorola Bipolar Power Transistor Device Data
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage(1)
BD675, 675A
(IC = 50 mAdc, IB = 0)
BD677, 677A
BD679, 679A
BD681
BVCEO
45
60
80
100
—
—
—
—
Vdc
Collector Cutoff Current (VCE = Half Rated VCEO, IB = 0)
ICEO
—
500
µAdc
Collector Cutoff Current
(VCB = Rated BVCEO, IE = 0)
(VCB = Rated BVCEO, IE = 0, TC = 100’C)
ICBO
—
—
0.2
2.0
mAdc
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
IEBO
—
2.0
mAdc
ON CHARACTERISTICS
DC Currert Gain(1)
(IC = 1.5 Adc,VCE = 3.0 Vdc)
BD675, 677, 679, 681
(IC = 2.0 Adc, VCE = 3.0 Vdc)
BD675A, 677A, 679A
hFE
750
750
—
—
—
Collector–Emitter Saturation Voltage(1)
(IC = 1.5 Adc, IB = 30 mAdc)
BD677, 679, 681
(IC = 2.0 Adc, IB = 40 mAdc)
BD675A, 677A, 679A
VCE(sat)
—
—
2.5
2.8
Vdc
Base–Emitter On Voltage(1)
(IC = 1.5 Adc, VCE = 3.0 Vdc)
BD677, 679, 681
(IC = 2.0 Adc, VCE = 3 0 Vdc)
BD675A, 677A, 679A
VBE(on)
—
—
2.5
2.5
Vdc
DYNAMIC CHARACTERISTICS
Small Signal Current Gain (IC = 1.5 Adc, VCE = 3.0 Vdc, f = 1.0 MHz)
hfe
1.0
—
—
(1) Pulse Test: Pulse Width
v 300 µs, Duty Cycle v 2.0%.
Figure 2. DC Safe Operating Area
5.0
1.0
VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)
2.0
1.0
0.5
0.05
2.0
5.0
10
50
100
BONDING WIRE LIMIT
THERMALLY LIMIT at TC = 25°C
SECONDARY BREAKDOWN LIMIT
0.2
0.1
TC = 25°C
BD675, 675A
BD677, 677A
BD679, 679A
BD681
20
There are two limitations on the power handling ability of a
transistor average junction temperature and secondary
breakdown. Safe operating area curves indicate IC – VCE lim-
its of the transistor that must be observed for reliable opera-
tion; e.g., the transistor must not be subjected to greater
dissipation than the curves indicate.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the limita-
tions imposed by secondary breakdown.
Figure 3. Darlington Circuit Schematic
BASE
NPN
BD675, 675A
BD677, 677A
BD679, 679A
BD681
COLLECTOR
EMITTER
[ 8.0 k
[ 120



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