công cụ tìm kiếm bảng dữ liệu linh kiện điện tử
  Vietnamese  ▼
ALLDATASHEET.VN

X  

Preview PDF HTML

ZXMHC10A07N8TC bảng dữ liệu(PDF) 4 Page - Diodes Incorporated

tên linh kiện ZXMHC10A07N8TC
Giải thích chi tiết về linh kiện  100V SO8 Complementary enhancement mode MOSFET H-Bridge
PDF  11 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
nhà sản xuất  DIODES [Diodes Incorporated]
Trang chủ  http://www.diodes.com
Logo DIODES - Diodes Incorporated

ZXMHC10A07N8TC bảng dữ liệu(HTML) 4 Page - Diodes Incorporated

  ZXMHC10A07N8TC Datasheet HTML 1Page - Diodes Incorporated ZXMHC10A07N8TC Datasheet HTML 2Page - Diodes Incorporated ZXMHC10A07N8TC Datasheet HTML 3Page - Diodes Incorporated ZXMHC10A07N8TC Datasheet HTML 4Page - Diodes Incorporated ZXMHC10A07N8TC Datasheet HTML 5Page - Diodes Incorporated ZXMHC10A07N8TC Datasheet HTML 6Page - Diodes Incorporated ZXMHC10A07N8TC Datasheet HTML 7Page - Diodes Incorporated ZXMHC10A07N8TC Datasheet HTML 8Page - Diodes Incorporated ZXMHC10A07N8TC Datasheet HTML 9Page - Diodes Incorporated Next Button
Zoom Inzoom in Zoom Outzoom out
 4 / 11 page
background image
ZXMHC10A07N8
Issue 1.0 - March 2009
4
© Diodes Incorporated
www.diodes.com
N-channel electrical characteristics (at Tamb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Static
Drain-Source breakdown
voltage
V(BR)DSS
100
V
ID = 250μA, VGS= 0V
Zero Gate voltage Drain
current
IDSS
0.5
µA
VDS= 100V, VGS= 0V
Gate-Body leakage
IGSS
±100
nA
VGS= ±20V, VDS= 0V
Gate-Source threshold
voltage
VGS(th)
2.0
4.0
V
ID= 250μA, VDS= VGS
Static Drain-Source
on-state resistance
(a)
RDS(on)
0.7
0.9
Ω
VGS= 10V, ID= 1.5A
VGS= 6.0V, ID= 1.0A
Forward
Transconductance
(a) (c)
gfs
1.6
S
VDS= 15V, ID= 1.0A
Dynamic
Capacitance
(c)
Input capacitance
Ciss
138
pF
VDS= 60V, VGS= 0V
f= 1MHz
Output capacitance
Coss
12
pF
Reverse transfer
capacitance
Crss
6
pF
Switching
(b) (c)
Turn-on-delay time
td(on)
1.8
ns
VDD= 50V, VGS= 10V
ID= 1.0A
RG ≅ 6.0Ω,
Rise time
tr
1.5
ns
Turn-off delay time
td(off)
4.1
ns
Fall time
tf
2.1
ns
Gate charge
(c)
Total Gate charge
Qg
2.9
nC
VDS=50V, VGS= 10V
ID= 1.0A
Gate-Source charge
Qgs
0.7
nC
Gate-Drain charge
Qgd
1.0
nC
Source–Drain diode
Diode forward voltage
(a)
VSD
0.95
V
IS= 1.5A, VGS= 0V
Reverse recovery time
(c)
trr
27
ns
IS= 1.8A, di/dt= 100A/μs
Reverse recovery charge
(c)
Qrr
12
nC
NOTES:
(a) Measured under pulsed conditions. Pulse width
≤ 300μs; duty cycle ≤ 2%.
(b) Switching characteristics are independent of operating junction temperature.
(c) For design aid only, not subject to production testing



Html Pages

1 2 3 4 5 6 7 8 9 10 11


bảng dữ liệu tải về

Go To PDF Page


Link URL



Cho đến nay ALLDATASHEET có giúp ích cho doanh nghiệp của bạn hay không?  [ DONATE ] 

Alldatasheet là   |   Quảng cáo   |   Liên lạc với chúng tôi   |   Chính sách bảo mật   |   Liên kết đến bảng dữ liệu    |   Trao đổi link   |   Tìm kiếm theo nhà sản xuất
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com