TRF7610

SILICON MOSFET POWER AMPLIFIER IC FOR GSM

SLWS059B – MAY 1997 – REVISED AUGUST 1998

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POST OFFICE BOX 655303

Voltage Required)

Operation

Package for Small Circuit Footprint

Frequency Range

description

The TRF7610 is a silicon MOSFET power amplifier IC for 900-MHz applications, tailored specifically for global

systems for mobile communications (GSM). It uses Texas Instruments RFMOS

™ process and consists of a

three-stage amplifier with output power control. Few external components are required for operation.

The TRF7610 amplifies the RF signal from a preceding modulator and the upconverter stages in an RF section

of a transmitter to a level that is sufficient for connection to the antenna. The RF input port, RFIN, and the RF

output port, RFOUT, require simple external matching networks.

A control signal applied to the VPC input can ramp the RF output power up or down to meet ramp and spurious

emission specifications for time-division multiple-access (TDMA) systems. The power control signal causes a

change in output power as the voltage applied to VPC varies between 0 V and 3 V. With the RF input power

applied to RFIN at 5 dBm, adjusting VPC from 0 V to 3 V increases the output power from a typical value of

– 43 dBm at VPC = 0 V to a typical value of 35 dBm at VPC = 3 V. Forward isolation with the RF input power

applied to RFIN at 5 dBm, VPC = 0 V, is typically 48 dB.

The TRF7610 is available in a thermally enhanced, surface-mount, 24-pin PowerPAD

™ (PWP) thin-shrink

small-outline package (TSSOP). It is characterized for operation from – 40

°C to 85°C operating free-air

temperature. In order to maintain acceptable thermal operating conditions, the device should be operated in

pulse applications such as the GSM standard 1/8 duty cycle. The package has a solderable pad that improves

the package thermal performance by bonding the pad to an external thermal plane. The pad also acts as a

low-inductance electrical path to ground and must be electrically connected to the printed circuit-board (PCB)

ground plane as a continuation of the regular package terminals that are designated GND.

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

Copyright

© 1998, Texas Instruments Incorporated

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

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VG2

VG3

VPC

VG1

NC

RFIN

RFIN

NC

VG1

VPC

VG3

VG2

VD1/VD2

GND

RFOUT/VD3

RFOUT/VD3

RFOUT/VD3

RFOUT/VD3

RFOUT/VD3

RFOUT/VD3

RFOUT/VD3

RFOUT/VD3

GND

VD1/VD2

PWP PACKAGE

(TOP VIEW)

NC – No internal connection

RFMOS and PowerPAD are trademarks of Texas Instruments Incorporated.