TRF7003

MOSFET POWER AMPLIFIER

SLWS058C – APRIL 1997 – REVISED JULY 1998

1

POST OFFICE BOX 655303

1000 MHz

– Typical Value of 32 dBm at 4.8 V and 900

MHz

– Typical Value of 29 dBm at 3.6 V and

900 MHz

– Typical Value of 9 dB at 4.8 V and

900 MHz at 32-dBm Output Power

– Typical Value of 50% at 32-dBm Output

Power

– Sustains 20:1 Load Mismatch

on Gate and Drain

description

The TRF7003 power amplifier is a silicon, metal-oxide semiconductor, field-effect transistor (MOSFET)

manufactured using the Texas Instruments RFMOS

™ process. It is housed in a SOT-89 (PK) plastic power

package. The TRF7003, suitable for a variety of wireless applications, has been characterized for global

systems for mobile communications (GSM) power amplifier applications. The TRF7003, a rugged, low-cost

device, operates from a single-polarity positive power supply and has low leakage current. Typical power output

at 900 MHz is 32 dBm, with an associated power gain of 9 dB and 50-percent power-added efficiency (PAE).

Copyright

© 1998, Texas Instruments Incorporated

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

GS

D

PK PACKAGE

(TOP VIEW)

These devices have limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam

during storage or handling to prevent electrostatic damage to the MOS gates.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

RFMOS is a trademark of Texas Instruments Incorporated.