BCP69T1

2

Motorola Small–Signal Transistors, FETs and Diodes Device Data

Characteristics

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Collector-Emitter Breakdown Voltage (IC = –100 µAdc, IE = 0)

V(BR)CES

–25

—

—

Vdc

Collector-Emitter Breakdown Voltage (IC = –1.0 mAdc, IB = 0)

V(BR)CEO

–20

—

—

Vdc

Emitter-Base Breakdown Voltage (IE = –10 µAdc, IC = 0)

V(BR)EBO

– 5.0

—

—

Vdc

Collector-Base Cutoff Current (VCB = – 25 Vdc, IE = 0)

ICBO

—

—

–10

µAdc

Emitter-Base Cutoff Current (VEB = – 5.0 Vdc, IC = 0)

IEBO

—

—

–10

µAdc

ON CHARACTERISTICS

DC Current Gain

(IC = – 5.0 mAdc, VCE = –10 Vdc)

(IC = – 500 mAdc, VCE = –1.0 Vdc)

(IC = –1.0 Adc, VCE = –1.0 Vdc)

hFE

50

85

60

—

—

—

—

375

—

—

Collector-Emitter Saturation Voltage (IC = –1.0 Adc, IB = –100 mAdc)

VCE(sat)

—

—

– 0.5

Vdc

Base-Emitter On Voltage (IC = –1.0 Adc, VCE = –1.0 Vdc)

VBE(on)

—

—

–1.0

Vdc

DYNAMIC CHARACTERISTICS

Current-Gain — Bandwidth Product

(IC = –10 mAdc, VCE = – 5.0 Vdc)

fT

—

60

—

MHz

TYPICAL ELECTRICAL CHARACTERISTICS

200

100

70

20

–10

–100

–1000

IC, COLLECTOR CURRENT (mA)

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (mA)

Figure 2. Current Gain Bandwidth Product

300

200

100

30

70

IC, COLLECTOR CURRENT (mA)

Figure 3. Saturation and “ON” Voltages

0

160

0

VR, REVERSE VOLTAGE (VOLTS)

Figure 4. Capacitances

50

VCE = –1.0 V

TJ = 25°C

50

–10

–100

–1000

VCE = –10 V

TJ = 25°C

f = 30 MHz

–1.0

– 0.8

– 0.6

– 0.4

– 0.2

–1.0

–100

–1000

–10

V(BE)sat @ IC/IB = 10

TJ = 25°C

V(BE)on @ VCE = –1.0 V

V(CE)sat @ IC/IB = 10

120

80

40

Cob

Cib

– 5.0

–1.0

– 2.0

– 4.0

– 2.5

– 5.0

Cib

Cob

TJ = 25°C

–1.0

– 2.0

–1.5

– 3.0