TLV2322, TLV2322Y, TLV2324, TLV2324Y

LinCMOS

™ LOW-VOLTAGE LOW-POWER

OPERATIONAL AMPLIFIERS

SLOS187 – FEBRUARY 1997

3

POST OFFICE BOX 655303

TLV2324Y chip information

This chip, when properly assembled, display characteristics similar to the TLV2324. Thermal compression or

ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive

epoxy or a gold-silicon preform.

BONDING PAD ASSIGNMENTS

+

–

1OUT

1IN +

1IN –

VDD

(4)

(6)

(3)

(2)

(5)

(1)

2IN +

2IN –

2OUT

(11)

VDD– /GND

+

–

3OUT

3IN +

3IN –

(13)

(10)

(9)

(12)

(8)

–

+

(14)

4OUT

4IN +

4IN –

+

–

(7)

CHIP THICKNESS: 15 MILS TYPICAL

BONDING PADS: 4

× 4 MILS MINIMUM

TJmax = 150°C

TOLERANCES ARE

±10%.

ALL DIMENSIONS ARE IN MILS.

PIN (12) IS INTERNALLY CONNECTED

TO BACKSIDE OF CHIP.

68

108

(1)

(2)

(3)

(4)

(5)

(6)

(7)

(8)

(9)

(10)

(11)

(12)

(13)

(14)