TLV2322, TLV2322Y, TLV2324, TLV2324Y

LinCMOS

™ LOW-VOLTAGE LOW-POWER

OPERATIONAL AMPLIFIERS

SLOS187 – FEBRUARY 1997

2

POST OFFICE BOX 655303

description (continued)

Low-voltage and low-power operation has been made possible by using the Texas Instruments silicon-gate

LinCMOS technology. The LinCMOS process also features extremely high input impedance and ultra-low bias

currents making these amplifiers ideal for interfacing to high-impedance sources such as sensor circuits or filter

applications.

To facilitate the design of small portable equipment, the TLV232x is made available in a wide range of package

options, including the small-outline and thin-shrink small-outline packages (TSSOP). The TSSOP package has

significantly reduced dimensions compared to a standard surface-mount package. Its maximum height of only

1.1 mm makes it particularly attractive when space is critical.

The device inputs and outputs are designed to withstand –100-mA currents without sustaining latch-up. The

TLV232x incorporates internal ESD-protection circuits that prevent functional failures at voltages up to 2000 V

as tested under MIL-STD 883C, Method 3015.2; however, care should be exercised in handling these devices

as exposure to ESD can result in the degradation of the device parametric performance.

TLV2322Y chip information

This chip, when properly assembled, displays characteristics similar to the TLV2322I. Thermal compression or

ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive

epoxy or a gold-silicon preform.

BONDING PAD ASSIGNMENTS

CHIP THICKNESS: 15 MILS TYPICAL

BONDING PADS: 4

× 4 MILS MINIMUM

TJmax = 150°C

TOLERANCES ARE

±10%.

ALL DIMENSIONS ARE IN MILS.

+

–

1OUT

1IN +

1IN –

VDD

VDD – /GND

(8)

(3)

(2)

(4)

+

–

2OUT

2IN +

2IN –

(5)

(6)

59

72

(5)

(4)

(3)

(2)

(6)

(7)

(8)

(1)