GFC150 datasheet(1/1 Pages) GSG

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Giải thích chi tiết về linh kiện	N Channel Power MOSFET with extremely low RDS(ON)

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Gunter Semiconductor GmbH

GFC150

N Channel Power MOSFET with extremely low RDS(ON)

Chip Specification

General Description:

* Advanced Process Technology

* Dynamic dV/dt Rating

* 175℃

℃

℃ Operating Temperature

* Fast Switching

* Fully Avalanche Rated

*Extremely low RDS(ON)

Mechanical Data:

D27

Dimension

6.53mm x6.53mm

Thickness:

400

µµµµm

Metallization:

Top :

:

Al

Backside :

CrNiAg / Au

Suggested Bonding Conditions:

Die Mounting:

Solder Perform

95/5 PbSn or 92.5./2.5/5 PbAgIn

Source Bonding Wire:

20 mil Al

Absolute Maximum Rating

@Ta=25℃

℃

Characteristics

Symbol

Limit

Unit

Test Conditions

Drain-to-Source Breakdown Voltage

V(BR)DSS

100

V

VGS=0V, ID=250

µΑ

Static Drain-to - Source On-resistance

RDS(ON)

0.055

Ω

VGS=10V, ID=25

Α

Continuous Drain current ( in target package)

ID@25℃

41

A

VGS=10V

Continuous Drain current ( in target package)

ID@100℃

29

A

VGS=10V

Operation Junction

Tj

-55~175

℃

Storage Temperature

TSTR

-55~175

℃

Target Device: IRFP150

TO-247AC

PD

230

W

@Tc=25℃

Số phần tương tự - GFC150

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Mô tả tương tự - GFC150

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GFC150 bảng dữ liệu(PDF) 1 Page - Gunter Seniconductor GmbH.

GFC150 bảng dữ liệu(HTML) 1 Page - Gunter Seniconductor GmbH.

Số phần tương tự - GFC150

Mô tả tương tự - GFC150

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