Excelics

EPB025A

DATA SHEET

Low Noise High Gain Heterojunction FET

•

TYPICAL 0.8dB NOISE FIGURE AND 11.0dB ASSOCIATED

GAIN AT 12GHz

•

0.3 X 250 MICRON RECESSED “MUSHROOM” GATE

•

•

ADVANCED EPITAXIAL DOPING PROFILE PROVIDES

SUPER LOW NOISE, HIGH GAIN AND HIGH

RELIABILITY

•

Idss SORTED IN 5mA PER BIN RANGE

SYMBOLS

PARAMETERS/TEST CONDITIONS

MIN

TYP

MAX

UNIT

NF

Noise Figure

f = 12GHz

Vds=2V, Ids=15mA

0.80

1.0

dB

Ga

Associated Gain

f = 12GHz

Vds=2V, Ids=15mA

10.0

11.0

dB

Output Power at 1dB Compression

f=12GHz

Vds=3V, Ids=25mA

f=18GHz

15.0

15.0

dBm

Gain at 1dB Compression

f=12GHz

Vds=3V, Ids=25mA

f=18GHz

13.0

11.0

dB

Idss

Saturated Drain Current

Vds=2V, Vgs=0V

20

50

80

mA

Gm

Transconductance

Vds=2V, Vgs=0V

50

80

mS

Vp

Pinch-off Voltage

Vds=2V, Ids=1.0mA

-1.0

-2.5

V

BVgd

Drain Breakdown Voltage Igd=10uA

-3

-5

V

BVgs

Source Breakdown Voltage Igs=10uA

-3

-5

V

Rth

Thermal Resistance (Au-Sn Eutectic Attach)

155

MAXIMUM RATINGS AT 25

SYMBOLS

PARAMETERS

ABSOLUTE

1

CONTINUOUS

2

Vds

Drain-Source Voltage

5V

3V

Vgs

Gate-Source Voltage

-3V

-3V

Ids

Drain Current

Idss

Idss

Igsf

Forward Gate Current

2mA

0.3mA

Pin

Input Power

12dBm

@ 1dB Compression

Tch

Channel Temperature

175

150

Tstg

Storage Temperature

-65/175

-65/150

Pt

Total Power Dissipation

880mW

730mW

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054

Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com

Chip Thickness: 75

± 13 microns

All Dimensions In Microns

50

48

50

40

59

78

104

420

260

90

DD

G

G

S

S