Excelics

EFA025AL

DATA SHEET

High Gain GaAs Power FET

•

+20.0dBm TYPICAL OUTPUT POWER

•

11.5dB TYPICAL POWER GAIN AT 12GHz

•

0.3 X 250 MICRON RECESSED “MUSHROOM” GATE

•

•

ADVANCED EPITAXIAL DOPING PROFILE

PROVIDES HIGH POWER EFFICIENCY,

LINEARITY AND RELIABILITY

•

Idss SORTED IN 5mA PER BIN RANGE

SYMBOLS

PARAMETERS/TEST CONDITIONS

MIN

TYP

MAX

UNIT

Output Power at 1dB Compression

f=12GHz

Vds=8V, Ids=50% Idss

f=18GHz

17.0

20.0

20.0

dBm

Gain at 1dB Compression

f=12GHz

Vds=8V, Ids=50% Idss

f=18GHz

9.5

11.5

9.0

dB

PAE

Power Added efficiency at 1dB Compression

Vds=8V, Ids=50% Idss

f=12GHz

38

%

Idss

Saturated Drain Current

Vds=3V, Vgs=0V

20

45

65

mA

Gm

Transconductance

Vds=3V, Vgs=0V

30

50

mS

Vp

Pinch-off Voltage

Vds=3V, Ids=1.0mA

-1.5

-2.5

V

BVgd

Drain Breakdown Voltage Igd=1.0mA

-12

-15

V

BVgs

Source Breakdown Voltage Igs=1.0mA

-7

-14

V

Rth

Thermal Resistance (Au-Sn Eutectic Attach)

155

MAXIMUM RATINGS AT 25

SYMBOLS

PARAMETERS

ABSOLUTE

1

CONTINUOUS

2

Vds

Drain-Source Voltage

12V

8V

Vgs

Gate-Source Voltage

-8V

-4V

Ids

Drain Current

Idss

Idss

Igsf

Forward Gate Current

6mA

1mA

Pin

Input Power

19dBm

@ 3dB Compression

Tch

Channel Temperature

175

150

Tstg

Storage Temperature

-65/175

-65/150

Pt

Total Power Dissipation

880mW

730mW

Note: 1. Exceeding any of the above ratings may result in permanent damage.

2. Exceeding any of the above ratings may reduce MTTF below design goals.

Excelics Semiconductor, Inc., 2908 Scott Blvd., Santa Clara, CA 95054

Phone: (408) 970-8664 Fax: (408) 970-8998 Web Site: www.excelics.com

Chip Thickness: 75

± 13 microns

All Dimensions In Microns

50

48

50

40

59

78

104

420

260

90

DD

G

G

S

S