EMP112

UPDATED 02/06/2006

5.0 – 7.2 GHz Power Amplifier MMIC

Specifications are subject to change without notice.

Excelics Semiconductor, Inc. 310 De Guigne Drive, Sunnyvale, CA 94085

page 2 of 3

Revised February 2006

Typical Performance:

4

5

6

7

8

9

Frequency (GHz)

EMP112 Small Signal Performance

-25

-20

-15

-10

-5

0

5

10

15

20

25

DB(|S[2,1]|) *

DB(|S[1,1]|) *

DB(|S[2,2]|) *

3. P-1 VS Vds @Idsq=800mA

EMP112 OIMD (dBc) vs. Pout(dBm)

-70

-65

-60

-55

-50

-45

-40

-35

-30

-25

-20

-15

-10

-5

0

0

5

10

15

20

25

Each Tone Pout (dBm)

OIMD3

OIMD5

EMP112 P1dB(dBm) vs. Vds

25

26

27

28

29

30

31

32

33

45

678

Frequency (GHz)

Vds=8V

Vds=7V

APPLICATION INFORMATION (CAUTION: THIS IS AN ESD SENSITIVE DEVICE)

Chip carrier should match GaAs thermal coefficienat of expansion and have high thermal conductivity, such as copper tungsten

or copper molybdenum. The chip carrier should be nickel-gold plated and capable of withstanding 325ºC for 20 minutes.

Die attach should be done with Gold/Tin (80/20) eutectic alloy in inert ambient gas. The backside is used as heatsinking, DC,

and RF contacts.

All die attach and wire bond equipment, especially the tools which touch a die, should be well grounded to avoid accidental

discharge through a die.