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Dated : 07/04/2009
SEMTECH ELECTRONICS LTD.
(
Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
1SS355
SILICON EPITAXIAL PLANAR SWITCHING DIODES
FEATURES
•
Small plastic package suitable
for surface mounted design
•
High reliability with high surge
current handling capability
APPLICATIONS
• High speed switching
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Symbol
Value
Unit
Peak Reverse Voltage
VRM
90
V
DC Reverse Voltage
VR
80
V
Mean Rectifying Current
IO
100
mA
Peak Forward Current
IFM
225
mA
Surge Current (1 s)
Isurge
500
mA
Junction Temperature
Tj
125
O
C
Storage Temperature Range
Tstg
- 55 to + 125
O
C
Electrical Characteristics (Ta = 25 OC)
Parameter
Symbol
Max.
Unit
Forward Voltage
at IF = 100 mA
VF
1.2
V
Reverse Current
at VR = 80 V
IR
0.1
µA
Capacitance between Terminals
at VR = 0.5 V, f = 1 MHz
CT
3
pF
Reverse Recovery Time
at VR = 6 V, IF = 10 mA, RL = 100 Ω
trr
4
ns
Anode
2
Top View
Marking Code: "W2"
Simplified outline SOD-323 and symbol
1
2
PINNING
1
PIN
Cathode
DESCRIPTION
W2
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