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SSM3055 bảng dữ liệu(PDF) 2 Page - SeCoS Halbleitertechnologie GmbH |
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SSM3055 bảng dữ liệu(HTML) 2 Page - SeCoS Halbleitertechnologie GmbH |
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2 / 4 page ![]() Elektronische Bauelemente SSM3055 4A, 30V,RDS(ON) 80m N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Unless otherwise specified) Total Gate Charge RDS(ON) http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual Parameter Symbol Max. Typ. Test Condition Min. Unit Drain-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Gate Threshold Voltage Gate-Source Leakage Current Drain-Source Leakage Current (Tj=25 ) Static Drain-Source On-Resistance Drain-Source Leakage Current (Tj=70 ) Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance BVDSS BVDS/ Tj VGS(th) IGSS IDSS Crss Qg Qgs Qgd Td(ON) Td(Off) Tr Ciss Coss Tf 30 0.037 1.0 3.0 100 25 250 80 100 5.4 1.3 3.6 3.6 19.8 13 3.2 260 144 13 ± V V/ V nA uA uA m nC nS pF Ω VGS=0V VDS=25V f=1.0MHz VDD=15V ID=1A VGS=10V RG=3.3 RD=1.9 Ω Ω ID=4A VDS=24V VGS=5V VGS=10V, ID=4A VGS=4.5V, ID=3A VGS=0V, ID=250uA VGS= 20V ± VDS=30V,VGS=0 VDS=24V,VGS=0 VDS=VGS, ID=250uA Reference to 25 ,ID=1mA _ _ _ _ Source-Drain Diode _ _ _ _ _ _ _ Parameter Symbol Max. Typ. Test Condition Min. Unit Forward On Voltage Continuous Source Current(Body Diode) Pulsed Source Current (Body Diode) 1 VDS IS ISM _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ VS=2A, VGS=0V.Tj=25 VD=VG=0V, Vs=1.3V V A A 1.3 4 20 Notes: 1.Pulse width Limited by safe operating area. 2.Pulse width 300us, dutycycle 2%. 01-Jun-2002 Rev. A Page 2 of 4 o C o C o C o C o 2 2 2 ≦ ≦ Ω |
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