TIP125 datasheet(1/1 Pages) DCCOM

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Giải thích chi tiết về linh kiện	TECHNICAL SPECIFICATIONS OF PNP DARLINGTON TRANSISTOR

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TIP125

DISCRETE SEMICONDUCTORS

R

DC COMPONENTS CO., LTD.

TECHNICAL SPECIFICATIONS OF PNP DARLINGTON TRANSISTOR

Description

Designed for use in general purpose amplifier

and low speed switching applications.

Pinning

1 = Base

2 = Collector

3 = Emitter

TO-220AB

Dimensions in inches and (millimeters)

.625(15.87)

.570(14.48)

.562(14.27)

.500(12.70)

.055(1.39)

.045(1.15)

.185(4.70)

.173(4.40)

.405(10.28)

.380(9.66)

.295(7.49)

.220(5.58)

.350(8.90)

.330(8.38)

.640

(16.25)

Typ

.055(1.40)

.045(1.14)

.037(0.95)

.030(0.75)

.100

(2.54)

Typ

.024(0.60)

.014(0.35)

Φ.151

Φ(3.83)

Typ

1 2 3

Characteristic

Symbol

Rating

Unit

Collector-Base Voltage

VCBO

-60

V

Collector-Emitter Voltage

VCEO

-60

V

Emitter-Base Voltage

VEBO

-5

V

Collector Current

IC

-5

A

Total Power Dissipation

PD

2

W

Total Power Dissipation(TC=25oC)

PD

65

W

Junction Temperature

TJ

+150

o

C

Storage Temperature

TSTG

-55 to +150

o

C

Absolute Maximum Ratings(TA=25oC)

Characteristic

Symbol

Min

Typ

Max

Unit

Test Conditions

Collector-Base Breakdown Volatge

BVCBO

-60

-

V

IC=-1mA

Collector-Emitter Breakdown Voltage

BVCEO

-60

-

V

IC=-100mA

Collector Cutoff Current

ICBO

-

-0.2

mA

VCB=-60V

ICEO

-

-0.5

mA

VCE=-30V

Emitter Cutoff Current

IEBO

-

-2

mA

VEB=-5V

Collector-Emitter Saturation Voltage(1)

VCE(sat)1

-

-2

V

IC=-3A, IB=-12mA

VCE(sat)2

-

-4

V

IC=-5A, IB=-20mA

Base-Emitter On Voltage(1)

VBE(on)

-

-2.5

V

IC=-3A, VCE=-3V

DC Current Gain(1)

hFE1

1K

-

IC=-500mA, VCE=-3V

hFE2

1K

-

IC=-3A, VCE=-3V

Output Capacitance

Cob

-

300

pF

VCB=-10V, f=0.1MHz

Electrical Characteristics

(Ratings at 25oC ambient temperature unless otherwise specified)

(1)Pulse Test: Pulse Width

380

µs, Duty Cycle 2%

Số phần tương tự - TIP125

nhà sản xuất	tên linh kiện	bảng dữ liệu	Giải thích chi tiết về linh kiện
Mospec Semiconductor	TIP125	206Kb / 4P	POWER TRANSISTORS(5.0A,60-100V,65W)
Motorola, Inc	TIP125	251Kb / 6P	DARLINGTON 5 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS
Power Innovations Ltd	TIP125	105Kb / 6P	PNP SILICON POWER DARLINGTONS
STMicroelectronics	TIP125	53Kb / 4P	COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Mar-2000
Fairchild Semiconductor	TIP125	45Kb / 4P	Medium Power Linear Switching Applications

More results

Mô tả tương tự - TIP125

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