BD746 datasheet(2/3 Pages) ISC

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Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

BD746/A/B/C

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

BD746

-45

BD746A

-60

BD746B

-80

V(BR)CEO

Collector-emitter

breakdown voltage

BD746C

IC=-30mA; IB=0

-100

VCEsat-1

Collector-emitter saturation voltage

IC=-5 A;IB=-0.5 A

-1.0

VCEsat-2

Collector-emitter saturation voltage

IC=-20 A;IB=-5 A

-3.0

VBE -1

Base-emitter on voltage

IC=-5A ; VCE=-4V

-1.0

VBE -2

Base-emitter on voltage

IC=-20A ; VCE=-4V

-3.0

BD746/A

VCE=-30V; IB=0

ICEO

Collector cut-off current

BD746B/C

VCE=-60V; IB=0

-0.1

BD746

VCE=-50V; VBE=0

TC=125℃

-0.1

-5.0

BD746A

VCE=-70V; VBE=0

TC=125℃

-0.1

-5.0

BD746B

VCE=-90V; VBE=0

TC=125℃

-0.1

-5.0

ICBO

Collector cut-off current

BD746C

VCE=-110V; VBE=0

TC=125℃

-0.1

-5.0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

-0.5

hFE-1

DC current gain

IC=-1A ; VCE=-4V

hFE-2

DC current gain

IC=-5A ; VCE=-4V

150

hFE-3

DC current gain

IC=-20A ; VCE=-4V

Switching times resistive load

Delay time

0.02

μs

Rise time

0.12

μs

Storage time

0.6

μs

Fall time

IC=-5 A;IB1=-IB2=-0.5 A

VBE(off)=4.2V; RL=6Ω

tp=20μs

0.3

μs

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

MAX

UNIT

Rth j-c

Thermal resistance junction to case

1.1

℃/W

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