2SD612 datasheet(2/4 Pages) ISC

tên linh kiện	2SD612

Giải thích chi tiết về linh kiện	Silicon NPN Power Transistors

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nhà sản xuất	ISC [Inchange Semiconductor Company Limited]

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Inchange Semiconductor

Product Specification

Silicon NPN Power Transistors

2SD612 2SD612K

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

2SD612

V(BR)CEO

Collector-emitter

breakdown voltage

2SD612K

IC=1mA; RBE=∞

2SD612

V(BR)CBO

Collector-base

breakdown voltage

2SD612K

IC=10μA ;IE=0

V(BR)EBO

Emitter-base breakdown voltage

IE=10μA ;IC=0

VCEsat

Collector-emitter saturation voltage

IC=1.5A ;IB=0.15A

0.3

0.8

VBEsat

Base-emitter saturation voltage

IC=1.5A ;IB=0.15A

1.1

1.5

ICBO

Collector cut-off current

VCB=20V; IE=0

μA

IEBO

Emitter cut-off current

VEB=4V; IC=0

μA

hFE-1

DC current gain

IC=0.5A ; VCE=2V

320

hFE-2

DC current gain

IC=1.5A ; VCE=2V

Transition frequency

IC=50mA ; VCE=10V

100

MHz

COB

Collector output capacitance

f=1MHz ; VCB=10V

Switching times

ton

Turn-on time

0.05

μs

Fall time

0.10

μs

tstg

Storage time

IC=500mA ; VCE=12V

IB1=-IB2=50mA

0.40

μs

hFE-1 Classifications

60-120

100-200

160-320

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