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STP432S bảng dữ liệu(PDF) 2 Page - SamHop Microelectronics Corp.

tên linh kiện STP432S
Giải thích chi tiết về linh kiện  N-Channel Logic Enhancement Mode Field Effect Transistor
PDF  8 Pages
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nhà sản xuất  SAMHOP [SamHop Microelectronics Corp.]
Trang chủ  http://www.samhop.com.tw
Logo SAMHOP - SamHop Microelectronics Corp.

STP432S bảng dữ liệu(HTML) 2 Page - SamHop Microelectronics Corp.

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background image
4 Symbol
Min
Typ
Max
Units
BVDSS
40
V
1
IGSS
±100
nA
VGS(th)
1
V
gFS
S
VSD
CISS
1600
pF
COSS
280
pF
CRSS
150
pF
Qg
20
nC
21
nC
Qgs
45
nC
Qgd
16
tD(ON)
32
ns
tr
3.5
ns
tD(OFF)
7.3
ns
tf
ns
Gate-Drain Charge
VDS=15V,VGS=0V
SWITCHING CHARACTERISTICS
Gate-Source Charge
VDD=15V
ID=30A
VGS=10V
RGEN=3.3 ohm
Total Gate Charge
Rise Time
Turn-Off Delay Time
VDS=15V,ID=30A,VGS=10V
Fall Time
Turn-On Delay Time
m ohm
VGS=10V , ID=30A
VDS=10V , ID=30A
Input Capacitance
Output Capacitance
DYNAMIC CHARACTERISTICS
RDS(ON)
Drain-Source On-State Resistance
Forward Transconductance
Diode Forward Voltage
IDSS
uA
Gate Threshold Voltage
VDS=VGS , ID=250uA
VDS=32V , VGS=0V
VGS= ±20V , VDS=0V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
ELECTRICAL CHARACTERISTICS (TC=25°C unless otherwise noted)
OFF CHARACTERISTICS
Parameter
Conditions
Drain-Source Breakdown Voltage
VGS=0V , ID=250uA
Reverse Transfer Capacitance
ON CHARACTERISTICS
3
VGS=4.5V , ID=28A
m ohm
c
f=1.0MHz
c
VDS=15V,ID=30A,
VGS=10V
DRAIN-SOURCE DIODE CHARACTERISTICS
c
VGS=0V,IS=30A
0.95
1.3
V
Notes
STB/P432S
Ver 1.0
www.samhop.com.tw
Jun,24,2008
2
nC
VDS=15V,ID=28A,VGS=4.5V
15
a.Surface Mounted on FR4 Board,t < 10sec.
b.Pulse Test:Pulse Width < 300us, Duty Cycle < 2%.
c.Guaranteed by design, not subject to production testing.
d.Starting TJ=25°C,L=1.25mH,RG=25
Ω,VDD = 20V.(See Figure13)
_
_
_
1.7
7
9
9
11
26
IS
Maximum Continuous Drain-Source Diode Forward Current
A
30



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