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TFDU4100 bảng dữ liệu(PDF) 3 Page - Vishay Siliconix

tên linh kiện TFDU4100
Giải thích chi tiết về linh kiện  2.7-5.5V Serial Infrared Transceiver Module Family
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TFDU4100 bảng dữ liệu(HTML) 3 Page - Vishay Siliconix

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TFDU4100/TFDS4500/TFDT4500
TELEFUNKEN
Semiconductor
Pending—Rev. A, 03-Apr-98
3
Pre-Release Information
Ordering Information
Part Number
Qty/ Reel
Description
TFDU4100–TR3
1000 pcs
Oriented in carrier tape for side view surface mounting
TFDU4100–TT3
1000 pcs
Oriented in carrier tape for top view surface mounting
TFDS4500–TR3
750 pcs
TFDT4500–TR3
750 pcs
Absolute Maximum Ratings
Parameter
Symbol
Test Conditionsa
Minb
Typc
Maxb
Unit
Supply Voltage Range
VCC1
– 0.5
6
V
Voltage Range of IRED Drive Output
VCC2
IRED anode pin, Txd LOW
– 0.5
6
V
Input Currentsd
10
mA
Output Sink Current
25
mA
Power Dissipatione
PD
200
mW
Junction Temperature
TJ
125
Ambient Temperature Range (Operating)
Tamb
–25
85
°C
Storage Temperature Range
Tstg
–25
85
°C
Soldering Temperature
t = 20 s
215
240
Average IRED Current
IIRED (DC)
100
mA
Repetitive Pulsed IRED Current
IIRED (RP)
t < 90
µs, ton<20%
500
mA
IRED Anode Voltage at Current Output
VIREDA
– 0.5
6
Transmitter Data Input Voltage
VTxd
– 0.5
Vcc + 0.5
V
Receiver Data Output Voltage
VRxd
– 0.5
Vcc + 0.5
Virtual Source Sizef
d
2.5
2.8
mm
Maximum Intensity for Class 1 Operation of
IEC 825 or EN60825g
EN60825, 1997
400
mW/sr
Notes
a.
Reference point GND pin unless otherwise noted.
b.
The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
c.
Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
d.
All pins except IRED cathode pin and IRED anode pin.
e.
See Derating Curve
f.
Method: (1-1/e) encircled energy.
g.
Worst case IrDA SIR pulse pattern.



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