TEMD1000 datasheet(2/5 Pages) VISHAY

2 / 5 page

TEMD1000

Vishay Telefunken

2 (5)

Rev. 5, 17-Feb-00

www.vishay.de

• FaxBack +1-408-970-5600

Document Number 81564

Basic Characteristics

Tamb = 25_C

Parameter

Test Conditions

Symbol

Min

Typ

Max

Unit

Forward Voltage

IF = 50 mA

1.0

1.3

Breakdown Voltage

IR = 100 mA, E = 0

V(BR)

Reverse Dark Current

VR = 10 V, E = 0

Iro

Diode Capacitance

VR = 5 V, f = 1 MHz, E = 0

1.8

Reverse Light Current

Ee = 1 mW/cm2,

l = 870 nm, VR = 5 V

Ira

Ee = 1 mW/cm2,

l = 950 nm, VR = 5 V

Ira

Temp. Coefficient of Ira

VR = 5 V, l = 870 nm

TKIra

0.2

%/K

Absolute Spectral Sensitivity

VR = 5 V, l = 870 nm

0.60

A/W

VR = 5 V, l = 950 nm

0.55

A/W

Angle of Half Sensitivity

±15

deg

Wavelength of Peak Sensitivity

900

Range of Spectral Bandwidth

l0.5

840...1050

Rise Time

VR = 10 V, RL = 50 W,

l = 820 nm

Fall Time

VR = 10 V, RL = 50 W,

l = 820 nm

Typical Characteristics (Tamb = 25_C unless otherwise specified)

100

1000

Tamb – Ambient Temperature ( °C )

100

94 8427

VR=10V

Figure 1. Reverse Dark Current vs. Ambient Temperature

020

0.6

0.8

1.0

1.2

1.4

Tamb – Ambient Temperature ( °C )

100

94 8416

VR=5V

l=950nm

Figure 2. Relative Reverse Light Current vs.

Ambient Temperature

TEMD1000 bảng dữ liệu(PDF) 2 Page - Vishay Siliconix

TEMD1000 bảng dữ liệu(HTML) 2 Page - Vishay Siliconix

Html Pages

1 2 3 4 5

bảng dữ liệu tải về

Link URL