2SA1077 datasheet(2/3 Pages) ISC

tên linh kiện	2SA1077

Giải thích chi tiết về linh kiện	Silicon PNP Power Transistors

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Inchange Semiconductor

Product Specification

Silicon PNP Power Transistors

2SA1077

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

MIN

TYP.

MAX

UNIT

V(BR)CEO

Collector-emitter breakdown voltage

IC=-1mA ,RBE=∞

-120

V(BR)CBO

Collector-base breakdown voltage

IC=-50μA ,IE=0

-120

V(BR)EBO

Emitter-base breakdown voltage

IE=-50μA ,IC=0

-7

VCEsat

Collector-emitter saturation voltage

IC=-5A; IB=-0.5A

-0.9

-1.8

VBE

Base-emitter on voltage

IC=-5A ; VCE=-5V

-1.25

-1.7

ICBO

Collector cut-off current

VCB=-120V; IE=0

-50

μA

ICEO

Collector cut-off current

VCE=-120V; IB=0

-1

IEBO

Emitter cut-off current

VEB=-7V; IC=0

-50

μA

hFE-1

DC current gain

IC=-1A ; VCE=-5V

200

hFE-2

DC current gain

IC=-5A ; VCE=-5V

Transition frequency

IC=-1A ; VCE=-10V;f=10MHz

MHz

COB

Output capacitance

IE=0 ; VCB=-10V;f=1MHz

300

470

Switching times

Rise time

0.15

μs

tstg

Storage time

0.5

μs

Fall time

IC=-7.5A; RL=4Ω

IB1=-IB2=-0.75A;

0.11

μs

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