BYW52 datasheet(2/6 Pages) VISHAY

2 / 6 page

www.vishay.com

Document Number 86049

Rev. 1.6, 14-Apr-05

BYW52 / 53 / 54 / 55 / 56

Vishay Semiconductors

Maximum Thermal Resistance

Tamb = 25 °C, unless otherwise specified

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Typical Characteristics (Tamb = 25

°C unless otherwise specified)

Pulse energy in avalanche

mode, non repetitive (inductive

load switch off)

I(BR)R = 1 A, Tj = 175 °C

i2* t-rating

i2*t

A2*s

Junction and storage

temperature range

Tj = Tstg

- 55 to + 175

°C

Parameter

Test condition

Symbol

Value

Unit

Junction ambient

l = 10 mm, TL = constant

RthJA

K/W

on PC board with spacing

25 mm

RthJA

100

K/W

Parameter

Test condition

Symbol

Min

Typ.

Max

Unit

Forward voltage

IF = 1 A

0.9

1.0

Reverse current

VR = VRRM

0.1

µA

VR = VRRM, Tj = 100 °C

510

µA

Breakdown voltage

IR = 100 µA, tp/T = 0.01,

tp = 0.3 ms

V(BR)

1600

Diode capacitance

VR = 4 V, f = 1 MHz

Reverse recovery time

IF = 0.5 A, IR = 1 A, iR = 0.25 A

trr

µs

IF = 1 A, di/dt = 5 A/µs, VR = 50 V

trr

µs

Reverse recovery charge

IF = 1 A, di/dt = 5 A/µsQrr

200

Parameter

Test condition

Part

Symbol

Value

Unit

Figure 1. Typ. Thermal Resistance vs. Lead Length

94 9101

TL= constant

120

l - Lead Length ( mm )

510

100

Figure 2. Forward Current vs. Forward Voltage

0.001

0.010

0.100

1.000

10.000

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8

VF – Forward Voltage(V)

16350

Tj =25 °C

Tj = 175 °C

BYW52 bảng dữ liệu(PDF) 2 Page - Vishay Siliconix

BYW52 bảng dữ liệu(HTML) 2 Page - Vishay Siliconix

Html Pages

1 2 3 4 5 6

bảng dữ liệu tải về

Link URL